Patents by Inventor Alain S. Harrus

Alain S. Harrus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing mobile ion contamination in semiconductor integrated circuits
    Patent number: 4980301
    Abstract: In a method of fabricating semiconductor integrated circuits, the effects of mobile ion contamination in a dielectric layer which has been subjected to a source of mobile ion contamination, e.g., reactive ion etching, is substantially eliminated by removing substantially only the topmost portion of the dielectric layer, e.g., 10-15 nm of an 800 nm layer, promptly after performing the step which produced the source of contamination.
    Type: Grant
    Filed: February 23, 1990
    Date of Patent: December 25, 1990
    Assignee: AT&T Bell Laboratories
    Inventors: Alain S. Harrus, Graham W. Hills, Cris W. Lawrence, Morgan J. Thoma
  • Low temperature intrinsic gettering technique
    Patent number: 4861126
    Abstract: Ionic drift in integrated optical devices is reduced by the utilization of a gettering layer interposed between the surface dielectric and the electrodes. The material used to form this layer is capable of gettering the mobile ions at a relatively low temperature (for example <600.degree. C.).
    Type: Grant
    Filed: May 5, 1988
    Date of Patent: August 29, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Mindaugas F. Dautartas, Alain S. Harrus, Edward P. Martin, Jr., Fred A. Stevie