Patents by Inventor Alain Soubie
Alain Soubie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Object provided with a graphic element transferred on a support and method for making such an object
Patent number: 9239414Abstract: An object including at least one graphic element, including at least one at least partly transparent substrate, at least one face of which includes recesses forming a pattern of the graphic element filled with the at least one material, the face of the substrate being fixed to at least one face of at least one support by wafer bonding, the substrate and the support forming a monolithic structure.Type: GrantFiled: January 23, 2009Date of Patent: January 19, 2016Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Alain-Marcel Rey, Jean-Frederic Clerc, Alain Soubie, Laurent Vandroux -
Patent number: 8435796Abstract: A method for using of a fabric comprising a material chosen from metals, metallic alloys, polymers, inorganic compounds and mixtures thereof, which material is capable of detecting the presence of a chemical substance, for the detection of said chemical substance.Type: GrantFiled: November 16, 2010Date of Patent: May 7, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Jean Brun, Catherine Durand, Alain Soubie
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Publication number: 20110117663Abstract: A method for using of a fabric comprising a material chosen from metals, metallic alloys, polymers, inorganic compounds and mixtures thereof, which material is capable of detecting the presence of a chemical substance, for the detection of said chemical substance.Type: ApplicationFiled: November 16, 2010Publication date: May 19, 2011Inventors: Jean BRUN, Catherine Durand, Alain Soubie
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OBJECT PROVIDED WITH A GRAPHIC ELEMENT TRANSFERRED ON A SUPPORT AND METHOD FOR MAKING SUCH AN OBJECT
Publication number: 20100310839Abstract: An object including at least one graphic element, including at least one at least partly transparent substrate, at least one face of which includes recesses forming a pattern of the graphic element filled with the at least one material, the face of the substrate being fixed to at least one face of at least one support by wafer bonding, the substrate and the support forming a monolithic structure.Type: ApplicationFiled: January 23, 2009Publication date: December 9, 2010Inventors: Alain-Marcel Rey, Jean-Frederic Clerc, Alain Soubie, Laurent Vandroux -
Patent number: 7645392Abstract: A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 ? to about 120 ? from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.Type: GrantFiled: June 21, 2006Date of Patent: January 12, 2010Assignees: S.O.I.Tec Silicon on Insulator Technologies, Commissariat a l'Energie Atomique (CEA)Inventors: Corinne Maunand Tussot, Christophe Maleville, Hubert Moriceau, Alain Soubie
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Patent number: 7406994Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.Type: GrantFiled: January 30, 2007Date of Patent: August 5, 2008Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventors: Muriel Martinez, Thierry Barge, Alain Soubie, Chrystelle Lagahe-Blanchard, Cécile Berne, Olivier Rayssac
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Publication number: 20070122926Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.Type: ApplicationFiled: January 30, 2007Publication date: May 31, 2007Applicant: S.O.I.Tec Silicon on Insulator Technologies S.A.Inventors: Muriel Martinez, Thierry Barge, Alain Soubie, Chrystelle Lagahe-Blanchard, Cecile Berne, Olivier Rayssac
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Patent number: 7189304Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.Type: GrantFiled: October 7, 2003Date of Patent: March 13, 2007Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.Inventors: Muriel Martinez, Thierry Barge, Alain Soubie, Chrystelle Lagahe-Blanchard, Cécile Berne, Olivier Rayssac
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Publication number: 20060273068Abstract: A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 ? to about 120 ? from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.Type: ApplicationFiled: June 21, 2006Publication date: December 7, 2006Inventors: Corinne Maunand Tussot, Christophe Maleville, Hubert Moriceau, Alain Soubie
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Publication number: 20040144487Abstract: An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.Type: ApplicationFiled: October 7, 2003Publication date: July 29, 2004Inventors: Muriel Martinez, Thierry Barge, Alain Soubie, Chrystelle Lagahe-Blanchard, Cecile Berne, Olivier Rayssac
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Patent number: 4585945Abstract: In a process for implanting particles in a solid in which is produced a substantially parallel beam of high-energy primary particles secondary particles are placed in the path of the latter and by interaction with the primary particles are projected towards the target with a sufficiently high energy level to penetrate the same. The secondary particles are in the gaseous state, the gas occupying an area facing the target.The apparatus for implanting particles in a solid has a target support and a solid target in a vacuum enclosure. It also has a source of high-energy primary particles, which supplies a substantially parallel beam thereof, a source of the secondary particles to be implanted in the target, a means for confining the secondary particles and communicating with the secondary particle source and having a primary opening for receiving the primary particle beam and a secondary opening for ejecting the secondary recoil particles towards the target.Type: GrantFiled: December 8, 1983Date of Patent: April 29, 1986Assignee: Commissariat a l'Energie AtomiqueInventors: Michel Bruel, Alain Soubie, Philippe Spinelli