Abstract: A method for testing at least one energy micro-storage device includes an anode made of metallic lithium formed by electrodeposition of ions on a metal inert to lithium ions, the method comprising a succession of steps during the manufacture of said anode: a step of measuring the initial voltage OCV of the energy micro-storage device; a first charging step, comprising applying a current, measuring the voltage and the internal resistance of the device in order to verify the compliance of the measurements on a very low lithium layer thickness formed at the anode; a second charging stabilization step, comprising applying a current and measuring the voltage of the device in order to verify the compliance of the measurements on a low lithium layer thickness formed at the anode; a retention step with a zero current applied and measuring the voltage in order to confirm the compliance of the energy micro-storage device. A system for implementing the method is also provided.

Abstract: A method for testing at least one energy micro-storage device includes an anode made of metallic lithium formed by electrodeposition of ions on a metal inert to lithium ions, the method comprising a succession of steps during the manufacture of said anode: a step of measuring the initial voltage OCV of the energy micro-storage device; a first charging step, comprising applying a current, measuring the voltage and the internal resistance of the device in order to verify the compliance of the measurements on a very low lithium layer thickness formed at the anode; a second charging stabilization step, comprising applying a current and measuring the voltage of the device in order to verify the compliance of the measurements on a low lithium layer thickness formed at the anode; a retention step with a zero current applied and measuring the voltage in order to confirm the compliance of the energy micro-storage device. A system for implementing the method is also provided.

Abstract: A microelectronic device comprising one or several metallic levels provided with one or several superposed metallic interconnecting levels and at least one test structure: at least one metallic zone formed in at least one insulating zone, the metallic zone comprising: at least one first metallic portion through which a current will be injected and at least one second metallic portion through which said current will be extracted, at least one third metallic portion that will act as a first voltage measurement point, and at least one fourth metallic portion that will act as a second measurement point for said voltage, a plurality of insulating islands incorporated in said metallic zone, said structure also comprising: a plurality of metallic islands incorporated in the insulating zone and distributed around said metallic zone.

Abstract: A microelectronic device comprising one or several metallic levels provided with one or several superposed metallic interconnecting levels and at least one test structure: at least one metallic zone formed in at least one insulating zone, the metallic zone comprising: at least one first metallic portion through which a current will be injected and at least one second metallic portion through which said current will be extracted, at least one third metallic portion that will act as a first voltage measurement point, and at least one fourth metallic portion that will act as a second measurement point for said voltage, a plurality of insulating islands incorporated in said metallic zone, said structure also comprising: a plurality of metallic islands incorporated in the insulating zone and distributed around said metallic zone.

Abstract: During a first period, the capacitive system to be qualified is polarized so as to be in the initial state (which can be accumulation or inversion in the case of a capacitive MIS semiconductor system). During a second period, the system is polarized so as to be in the depletion state with constant capacitance. As from a determined instant during the second period, the capacitive value of the system is recorded. This value serves as a reference for the servocontrol of the variation of the polarization voltage maintaining the capacitive system in the depletion state. The measurement of the servocontrol voltage makes it possible to obtain the desired qualification.