Abstract: A suspension for a rail vehicle includes at least one spring (18) carrying a wedge element (20) constrained to move in a vertical direction and a load application member (24) for engaging the wedge (20) to transmit the load to the wedge (20) along a direction. The damping ration of the suspension is variable by altering the engagement between the load application member (24) and the wedge (20) and hence the direction.

Abstract: This invention relates to a side bearer (10) for a railway bogie having a longitudinal axis, including a lower component (11) for attachment to the bogie, an upper component (18) carrying a friction bearing plate (17) for receiving a part of a vehicle to be supported on the bogie and having a pair of divergent lower surfaces and a mounting for mounting the upper component on the lower component for relative vertical movement, the mounting means including first and second elements having respective inclined surfaces (19, 21) for receiving respective lower surfaces of the upper element, springs (15) for supporting the first and second lower elements and guide means for guiding the first and second elements for vertical movement characterised in that the first and second elements are horizontally separable by a downward vertical movement of the upper element for thereby urging them against the guide means for generating a substantially constant vertical damping force between the first and second elements and the

Abstract: This invention relates to steering links for bogies and to wagons incorporating such bogies, a variable length steering link assembly for a bogie including an elongate link having a generally T-shaped head at each end and an anchor for each end, wherein each anchor defines an axially extending chamber for slidably receiving a respective head an a compression spring wherein in one chamber the spring acts on the end fact of its associated head and in the other chamber the spring acts on the back face of its associated head.

Abstract: A method of forming combination CMOS field effect transistors optionally with a charge transfer device in a single substrate. Different resistivities in the P type wells of the substrate are formed by a combination of masks; a high energy low dosage ion implantation of impurity passes through one mask but not the other, and a low energy high dosage ion implantation of the impurity is stopped by both masks. A significant number of fabrication steps is thus saved, and the devices so fabricated are threshold and field voltage compatible.