Abstract: Provided are omecamtiv mecarbil dihydrochloride salt forms, compositions and pharmaceutical formulations thereof, and methods for their preparation and use.

Abstract: A hydraulic pump or motor includes a mounting flange that is disposed at the first end of the housing. The mounting flange defines a pair of bolt receiving slots that are disposed along the X-axis on either side of the shaft. The pair of bolt receiving slots each define a radius center that are spaced away from each other a X dimension, and a pilot projection extends longitudinally away from the mounting flange, defining a pilot projection diameter. A ratio of the X dimension to the pilot projection diameter ranges from 1.1 to 1.5.

Abstract: Provided are omecamtiv mecarbil dihydrochloride salt forms, compositions and pharmaceutical formulations thereof, and methods for their preparation and use.

Abstract: An audio device includes a first speaker and a second speaker. A front surface of a membrane of the second speaker faces a rear surface of a membrane of the first speaker. The membrane of the first speaker moves in an opposite direction than the membrane of the second speaker when the audio device outputs audio content. This configuration maintains isobaric pressure for a back volume shared between the first speaker and the second speaker, reducing vibration of the audio device when outputting audio content.

Abstract: Process for ultrasonically bonding nonwoven webs comprising: providing a nonwoven web comprised of base fibers in an amount from 0 to 85 wt % and binder fibers in an amount from 15 to 100 wt %, based on the total weight of the nonwoven web; and ultrasonically bonding the nonwoven web to itself or another nonwoven web, wherein the binder fibers comprise cellulose ester fibers.

Abstract: Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.

Abstract: Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.

Abstract: Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.

Abstract: An approach for providing content transmission upon placement of a call on hold is disclosed. A data communications system includes a proxy server that is configured to receive a message from a first client indicating the hold condition of a Voice Over Internet Protocol (VOIP) call with a second client. The system also includes a content server (e.g., music server) that is configured to transmit the content stored therein to the second client in response to a request message from the server.

Abstract: An approach for supporting telephony services for use over a data network that includes at least one of the Internet and a private Intranet is disclosed. A communications system includes a switch that is coupled to a telephone network and is configured to determine presence of a dialing prefix of a call. The system also includes a gateway that is coupled to the data network and configured to communicate with the switch. The switch selectively routes the call based upon the presence of the dialing prefix to the gateway.

Abstract: A structure, and a method for forming the same. The structure includes a semiconductor substrate which includes a top substrate surface, a buried dielectric layer on the top substrate surface, N active semiconductor regions on the buried dielectric layer, N active devices on the N active semiconductor regions, a plurality of dummy regions on the buried dielectric layer, a protection layer on the N active devices and the N active semiconductor regions, but not on the plurality of dummy regions. The N active devices comprise first active regions which comprise a first material. The plurality of dummy regions comprise first dummy regions which comprise the first material. A first pattern density of the first active regions and the first dummy regions is uniform across the structure. A trench in the buried dielectric layer such that side walls of the trench are aligned with the plurality of dummy regions.

Abstract: An insect bait station that is pre-filled with a suitable bait, preferably a combination of attractant and toxicant, and is activated for use by a snap-open closure that exposes an entrance/exit disposed on the upper part of the bait station for providing insects with access to the bait. The entrance is disposed above the level of the contained bait and an internal ramp structure allows insects to traverse downward to the bait from the opening, as well as upward to exit the bait station. Providing a ramp structure ensures continual access even as the level of the bait within the station drops, due to evaporation, consumption, spillage etc. By enabling egress from the bait station, the ramp further prevents the accumulation of dead insects inside the bait station, the scent of which, would nullify effectiveness. A cradle is provided for receiving the bait station in two alternate configurations, namely a non-activated and sealed stowed configuration and an activated and un-sealed deployed configuration.

Abstract: Methods and structures for improving substrate loss and linearity in SOI substrates. The methods include forming damaged crystal structure regions under the buried oxide layer of SOI substrates and the structures included damaged crystal structure regions under the buried oxide layer of the SOI substrate.

Abstract: A spill resistant insect bait station designed for secure anchorage to the ground is disclosed as having a generally hollow main body defining an internal reservoir for containing a flowable, preferably liquid, bait contained therein. The main body is preferably fabricated from plastic via a blow molding process that includes the steps of filling and sealing. By removing a seal, an access opening is provided at ground level in proximity to the base and an access tunnel guides insects to an opening at the top of the bait station. At top opening on the opposite side of the bait station relative to the access opening allows insect access to the internal reservoir while rending the bait station inherently spill resistant. The inner wall of the main body includes a spiral ramp leading downward to provide insects with access to liquid bait contained therein.

Abstract: Methods and structures for improving substrate loss and linearity in SOI substrates. The methods include forming damaged crystal structure regions under the buried oxide layer of SOI substrates and the structures included damaged crystal structure regions under the buried oxide layer of the SOI substrate.

Abstract: A structure, and a method for forming the same. The structure includes a semiconductor substrate which includes a top substrate surface, a buried dielectric layer on the top substrate surface, N active semiconductor regions on the buried dielectric layer, N active devices on the N active semiconductor regions, a plurality of dummy regions on the buried dielectric layer, a protection layer on the N active devices and the N active semiconductor regions, but not on the plurality of dummy regions. The N active devices comprise first active regions which comprise a first material. The plurality of dummy regions comprise first dummy regions which comprise the first material. A first pattern density of the first active regions and the first dummy regions is uniform across the structure. A trench in the buried dielectric layer such that side walls of the trench are aligned with the plurality of dummy regions.