Abstract: Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

Abstract: An apparatus and process for measuring light intensities includes the use of a probe. The probe is configured for monitoring a wavelength range from about 180 nanometers to about 270 nanometers (nm). The probe comprises a reflective and diffusive layer adapted for collecting light; a waveguide having one end in optical communication with the reflective and diffusive layer, wherein the waveguide has greater than about 50 percent transmission at wavelengths of about 180 nm to about 270 nm; a sensor probe in optical communication with the other end of the waveguide; and a filter intermediate to the waveguide and the sensor, wherein the filter is adapted to remove wavelengths greater than about 270 nm and has a percent transmission at wavelengths of about 180 nm to about 270 nm greater than about 50 percent.

Abstract: An apparatus and process for enhancing the ignition of a gas to form a plasma in a plasma tool. The apparatus and process includes the use of a plasma tube to locally enhance the applied electric field so that plasma can be initiated at higher pressures, at lower electric fields, and/or in otherwise difficult gases to ignite. The plasma tube includes at least one conductive fiber secured to the tube. A process for enhancing the local electric field includes coupling the plasma tube to an energy source such as microwave energy, radiofrequency energy, or a combination comprising at least one of the foregoing energy sources.

Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.

Abstract: An apparatus and process for measuring light intensities includes the use of a probe. The probe is configured for monitoring a wavelength range from about 180 nanometers to about 270 nanometers (nm). The probe comprises a reflective and diffusive layer adapted for collecting light; a waveguide having one end in optical communication with the reflective and diffusive layer, wherein the waveguide has greater than about 50 percent transmission at wavelengths of about 180 nm to about 270 nm; a sensor probe in optical communication with the other end of the waveguide; and a filter intermediate to the waveguide and the sensor, wherein the filter is adapted to remove wavelengths greater than about 270 nm and has a percent transmission at wavelengths of about 180 nm to about 270 nm greater than about 50 percent.

Abstract: A dielectric barrier discharge apparatus for treating a substrate includes a first planar electrode; a dielectric layer disposed on a surface of the first planar electrode; a porous planar electrode spaced above and in a parallel plane with the dielectric layer, wherein the porous planar electrode has a geometric transmission factor greater than 70 percent; and a power supply in electrical communication with the first electrode and the second electrode. A process for treating a substrate includes exposing the substrate surface to reactants produced by the dielectric barrier discharge apparatus.

Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.

Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.

Abstract: A radiation source constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode having a two dimensional surface bounding one side of a radiation emitting region. An ionizable, excimer gas is present in the radiation emitting region. The excimer gas, when energized, emits radiation in the UV and/or VUV wavelengths. A two dimensional dielectric radiation transmissive layer bounds an opposite side of the radiation emitting region and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer and a protective radiation transmissive window is a two dimensional matrix or screen electrode defining a plane generally parallel to the two dimensional surface of the base electrode region. A power supply coupled to the base and matrix electrodes to energize the electrodes and the eximer gas causing emission of UV and/or VUV radiation.

Abstract: A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing.

Abstract: A process for optically reducing charge build-up in an integrated circuit includes exposing the integrated circuit or portions thereof to a broadband radiation source. The process effectively reduces charge buildup that occurs in the manufacture of integrated circuits.

Abstract: The present invention is directed to optimization of the optical detection system for the use of optical emission spectroscopy in end-point detection. The optimization specifically addresses the needs of a radiant heated wafer system in a downstream process chamber environment. The present invention maximizes signal light from relevant reactions, maximizes signal-to noise and signal-to-background ratios, utilizes very small diagnostics access, collects light from the region of most intense light emission from endpoint processes, collects light from representative parts of an entire wafer with just one diagnostic access port to ensure complete end-point, and eliminates light signals from sources other than the wafer.

Abstract: A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing.

Abstract: A radiation source constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode having a two dimensional surface bounding one side of a radiation emitting region. An ionizable, excimer gas is present in the radiation emitting region. The excimer gas, when energized, emits radiation in the UV and/or VUV wavelengths. A two dimensional dielectric radiation transmissive layer bounds an opposite side of the radiation emitting region and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer and a protective radiation transmissive window is a two dimensional matrix or screen electrode defining a plane generally parallel to the two dimensional surface of the base electrode region. A power supply coupled to the base and matrix electrodes to energize the electrodes and the eximer gas causing emission of UV and/or VUV radiation.

Abstract: An apparatus and process for enhancing the ignition of a gas to form a plasma in a plasma tool. The apparatus and process includes the use of a plasma tube to locally enhance the applied electric field so that plasma can be initiated at higher pressures, at lower electric fields, and/or in otherwise difficult gases to ignite. The plasma tube includes at least one conductive fiber secured to the tube. A process for enhancing the local electric field includes coupling the plasma tube to an energy source such as microwave energy, radiofrequency energy, or a combination comprising at least one of the foregoing energy sources.

Abstract: A plasma ashing chamber that uses an external radiant power source to uniformly heat the wafer is provided with a double plate window through which radiant heat and exhaust gases flow without interfering with each other.

Abstract: An inductive transformer in the form of a solenoidal coils aligned along the major axis of a flux core induces poloidal flux along the flux core's axis. The current in the solenoidal coil is then reversed resulting in a poloidal flux swing and the conversion of a portion of the poloidal flux to a toroidal flux in generating a spheromak plasma wherein equilibrium approaches a force-free, minimum Taylor state during plasma formation, independent of the initial conditions or details of the formation. The spheromak plasma is sustained with the Taylor state maintained by oscillating the currents in the poloidal and toroidal field coils within the plasma-forming flux core. The poloidal flux transformer may be used either as an amplifier stage in a moving plasma reactor scenario for initial production of a spheromak plasma or as a method for sustaining a stationary plasma and further heating it.

Abstract: The inductively formed spheromak plasma can be maintained in a highly stable and controlled fashion. Steady-state operation is obtained by forming the plasma in the linked mode, then oscillating the poloidal and toroidal fields such that they have different phases. Preferably, the poloidal and magnetic fields are 90.degree. out of phase.