Abstract: Particles of electroluminescent phosphor having a moisture proof coating are re-coated by treating the phosphor in a fluidized bed with a mixture of water vapor and an organotrichlorosilane compound for approximately thirty minutes. The resultant siloxane coating further improves the moisture resistance of the phosphor.

Abstract: At least one layer of cascading material overlying an EL lamp converts the light emitted by the EL lamp into infrared light. The EL lamp is supported within in a container transparent to at least infrared light, along with at least one battery and an inverter to provide power for the lamp in portable applications. The lamp is rolled to form a cylinder and fits within the inside diameter of the container. The lamp can be turned on or off by means of a switch interrupting current from a battery or to the lamp.

Abstract: A method for employing a plurality of reusable reticles in an integrated circuit manufacturing process employing lithographic exposure of a semiconductor wafer. Initially there is provided a matrix of a plurality of reticles, each matrix comprising a plurality of tuples of reticles, each reticle tuple comprising one or more reticles. The method then includes defining at least one set of valid groups of reticles in the matrix for use in a desired lithographic exposure process, defining a set of conditions for determining availability of all reticles in the valid groups in the lithographic exposure process, and comparing the availability conditions to the reticles in the set of valid groups and eliminating valid groups which do not meet the availability conditions, leaving non-eliminated valid groups.

Abstract: A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Stepper-framing-blades are moved over the dead zone to prevent additional exposures after an initial exposure.

Abstract: A method of making a photolithography mask for use in creating an electrical fuse on a semiconductor structure comprises initially determining a pattern for a desired electrical fuse, with the pattern including a fuse portion of substantially constant width except for a localized narrowed region of the fuse portion at which the electrical fuse is designed to blow. The method then includes providing a photolithography mask substrate and creating on the photolithography mask substrate a fuse mask element adapted to absorb transmission of an energy beam. The fuse mask element has a first mask portion of substantially constant width corresponding to the desired electrical fuse pattern portion of substantially constant width, and a second mask portion corresponding to the localized narrowed region of the fuse portion. The second mask portion comprises either an additional mask element spaced from the first mask portion, a narrowed width portion, or a gap in the first mask portion.

Abstract: A system is provided for controlling the time at which a durable item, such as a reticle used in a lithography process in semiconductor manufacturing, is requalified for use. A counting device counts occurrences of predefined events, such as the number of jobs in which the reticle is used or the number of times it is placed in a lithography tool. The reticle is not removed from use until a limiting number of jobs or tool placements is reached, or the reticle is needed for processing the requalification job. The system also includes a requalification device for the durable item.

Abstract: A method of forming a resist layer of uniform thickness across a surface patterned with a varying density of high aspect ratio features. A selected material layer having an affinity to a resist coat to be applied over the selected material layer is applied to a wafer having a plurality of recesses before applying a resist coat. After the resist coat is applied over the selected material layer, the selected material diffuses partially into the resist coat to condition a portion of the resist coat to be insoluble in the presence of a developer which is applied after the resist coat. Those portions of the resist coat into which the selected material layer has not diffused then are removed by a developer leaving a uniform resist coat thickness across the wafer.

Abstract: The present invention provides a method and an optical lithographic system which eliminates the standing wave effect typically observed in photoresists without the need for altering the thickness of the photoresist, utilizing an anti-reflective coating material, or changing the light source. Specifically, the present invention compensates for standing waves by exposing the photoresist with light from a light source at different phases. That is, in the present invention there is a change in light exposure from a single dose at one phase to a plurality of doses at different phases; therefore dispersing the effects of the standing wave at each of those phases which in turn eliminates the standing wave.

Abstract: Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.

Abstract: A trench capacitor with a buried plate is formed with a single etching process by the expedient of filling the trench so formed and lined with diffusion source material with resist by baking and reflowing the resist which also serves to adjust exposure sensitivity of the resist such that exposure and development of the resist removes the resist to a repeatable and uniform depth. Remaining resist allows etching of the diffusion source layer to a very accurate dimension. Thus only a readily formed oxide or TECS layer is needed to confine impurities during diffusion to form the buried plate. An isolation collar can be formed after recess of the fill to avoid formation of step corners and erosion of the isolation collar by repeated fill and etch back processes while permitting maximum capacitance to be achieved for a given trench "footprint".

Abstract: An electroluminescent lamp including a phosphor layer disposed between corresponding lamp electrodes that are adapted to apply an excitation potential to cause the phosphor layer to emit light, the front lamp electrode being light-transmsisive to radiation from the phosphor layer, has an improved front lamp electrode consisting of a thin layer of light-transmissive binder containing a distribution of discrete gallium-doped zinc oxide particles. A method of forming the lamp is also described.