Patents by Inventor Alan Carter Seabaugh

Alan Carter Seabaugh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hot carrier transistors utilizing quantum well injector for high current gain
    Patent number: 6201258
    Abstract: A quantum transistor (10) includes an emitter (38), an injector structure (36), a base (20) and a collector (16) coupled to the base. The injector (36) is interposed between the emitter (38) and the base (20). The injector structure (36) includes a quantum well (60) having a general conductance band minimum energy level. A notch (28) in the well (60) has a conductance band minimum energy level that is lower than the general level. This notch (28) is operable to lower the energy of electrons disposed in the quantum well (60). Therefore, the electrons resident in the well are injected through a barrier (24) into the base (20) at an energy level at or slightly above the base/collector barrier &phgr;BC, but below the X or L energies such that intervalley scattering is reduced.
    Type: Grant
    Filed: June 21, 1994
    Date of Patent: March 13, 2001
    Assignee: Texas Instruments Incorporated
    Inventor: Alan Carter Seabaugh
  • Multiple peak resonant tunneling diode
    Patent number: 5981969
    Abstract: A multiple peak resonant tunneling diode (10) includes multiple vertical semiconductor structures (12, 13). The vertical structures (12, 13) include a resonant tunneling diode having a predetermined cross-sectional area and a series resistor of a predetermined resistance. The vertical structures (12, 13) are spaced from one another and interconnected in parallel. Additionally, the vertical semiconductor structures (12, 13) are fabricated such that their predetermined diode cross-sectional areas and series resistances have values that vary by predetermined amounts to adjust the respective peak currents and/or peak voltages of the vertical semiconductor structures (12, 13).
    Type: Grant
    Filed: October 29, 1993
    Date of Patent: November 9, 1999
    Assignee: Texas Instruments Incorporated
    Inventors: Han-Tzong Yuan, Alan Carter Seabaugh
  • Magnetic field sensor using heterojunction bipolar transistors
    Patent number: 5680280
    Abstract: A magnetic sensor using heterojunction transistors for detecting magnetically recorded data. The sensor has a pair of heterojunction transistors T1, T2 connected in a differential circuit disposed on a substrate 18. The substrate 18 is carded on the free end of a suspension arm 12 at a distance D from the surface of a disk 14 having magnetically recorded data thereon. The transistors are disposed a distance S apart which is selected with D so that the magnetic field direction at one transistor is generally perpendicular to the disk 14 and the magnetic field direction at the other transistor is generally parallel to the disk 14 when a magnetic transition occurs immediately adjacent the magnetic sensor.
    Type: Grant
    Filed: September 11, 1996
    Date of Patent: October 21, 1997
    Assignee: Texas Instruments Incorporated
    Inventors: Alan Carter Seabaugh, Gary A. Frazier