Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).

Abstract: Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.

Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.

Abstract: Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.

Abstract: Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are (disubstituted alkyne) dicobalt hexacarbonyl compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Disubstituted alkyne ligands with alkyl groups such as linear alkyls and branched alkyls to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Abstract: Described herein are cobalt compounds, processes for making cobalt compounds, and compositions comprising cobalt metal-film precursors used for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, etc.). Examples of cobalt precursor compounds are (alkyne) dicobalt hexacarbonyl compounds, cobalt enamine compounds, cobalt monoazadienes, and (functionalized alkyl) cobalt tetracarbonyl. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Functionalized ligands with groups such as amino, nitrile, imino, hydroxyl, aldehyde, esters, halogens, and carboxylic acids are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Abstract: Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are (disubstituted alkyne) dicobalt hexacarbonyl compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Disubstituted alkyne ligands with alkyl groups such as linear alkyls and branched alkyls to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Abstract: Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are (disubstituted alkyne) dicobalt hexacarbonyl compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Disubstituted alkyne ligands with alkyl groups such as linear alkyls and branched alkyls to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Abstract: A process and system for a process for releasing hydrogen from a hydrogenated organic carrier. The process including providing a reactor system comprising a first reaction zone and a second reaction zone, the first reaction zone having a first reaction condition and the second reaction zone having a second reaction condition, wherein the first reaction condition and the second reaction condition are different. A ballast system and method are also disclosed. The ballast system includes at least one vessel containing metal hydride capable of selectively storing hydrogen from the hydrogen-containing stream and one or both of selectively providing hydrogen to one or both of a hydrogen load or the dehydrogenation system.

Abstract: An apparatus and method for storing and releasing hydrogen is disclosed. In one embodiment, the apparatus includes a reactor, a heater having a first portion that is located in the reactor; a dehydrogenation catalyst that is affixed to the first portion of the heater; a hydrogen release conduit in communication with the reactor; a chamber containing a hydrogenated carrier; and an energy source coupled to the heater.

Abstract: Processes are provided for the storage and release of hydrogen by means of dehydrogenation of hydrogen carrier compositions where at least part of the heat of dehydrogenation is provided by a hydrogen-reversible selective oxidation of the carrier. Autothermal generation of hydrogen is achieved wherein sufficient heat is provided to sustain the at least partial endothermic dehydrogenation of the carrier at reaction temperature. The at least partially dehydrogenated and at least partially selectively oxidized liquid carrier is regenerated in a catalytic hydrogenation process where apart from an incidental employment of process heat, gaseous hydrogen is the primary source of reversibly contained hydrogen and the necessary reaction energy.

Abstract: Processes are provided for the storage and release of hydrogen by means of dehydrogenation of hydrogen carrier compositions where at least part of the heat of dehydrogenation is provided by a hydrogen-reversible selective oxidation of the carrier. Autothermal generation of hydrogen is achieved wherein sufficient heat is provided to sustain the at least partial endothermic dehydrogenation of the carrier at reaction temperature. The at least partially dehydrogenated and at least partially selectively oxidized liquid carrier is regenerated in a catalytic hydrogenation process where apart from an incidental employment of process heat, gaseous hydrogen is the primary source of reversibly contained hydrogen and the necessary reaction energy.

Abstract: Processes are provided for the storage and release of hydrogen by means of a substantially reversible catalytic hydrogenation of extended pi-conjugated substrates which include large polycyclic aromatic hydrocarbons, polycyclic aromatic hydrocarbons with nitrogen heteroatoms, polycyclic aromatic hydrocarbons with oxygen heteroatoms, polycyclic aromatic hydrocarbons with alkyl, alkoxy, nitrile, ketone, ether or polyether substituents, pi-conjugated molecules comprising 5 membered rings, pi-conjugated molecules comprising six and five membered rings with nitrogen or oxygen hetero atoms, and extended pi-conjugated organic polymers. The hydrogen, contained in the at least partially hydrogenated form of the extended pi-conjugated system, can be facilely released for use by a catalytic dehydrogenation of the latter in the presence of a dehydrogenation catalyst which can be effected by lowering the hydrogen gas pressure, generally to pressures greater than 0.1 bar or raising the temperature to less than 250° C.

Abstract: The disclosure relates to a material for reversibly storing and releasing hydrogen comprising graphite or a graphitic structure, for example, comprising an ordered graphite structure of carbon and nitrogen atoms wherein the interlayer and/or interstitial volume is occupied with at least one intercalated anionic species. While any suitable anionic species can be employed, examples of suitable species are at least one of: F? (fluoride), (C?C)2? (diacetylide), and (N?C?N)2?. Desirable anionic species typically have a relatively high charge to volume ratio. The disclosure also relates to a material for reversibly storing and releasing hydrogen comprising ordered graphitic structures comprising at least one member selected from the group of graphite, single walled carbon nanotubes, multiwalled carbon nanotubes, graphite nanofibers, carbon nanohorns, and boron nitride.

Abstract: Processes are provided for the storage and release of hydrogen by means of a substantially reversible catalytic hydrogenation of extended pi-conjugated substrates which include large polycyclic aromatic hydrocarbons, polycyclic aromatic hydrocarbons with nitrogen heteroatoms, polycyclic aromatic hydrocarbons with oxygen heteroatoms, polycyclic aromatic hydrocarbons with alkyl, alkoxy, nitrile, ketone, ether or polyether substituents, pi-conjugated molecules comprising 5 membered rings, pi-conjugated molecules comprising six and five membered rings with nitrogen or oxygen hetero atoms, and extended pi-conjugated organic polymers. The hydrogen, contained in the at least partially hydrogenated form of the extended pi-conjugated system, can be facilely released for use by a catalytic dehydrogenation of the latter in the presence of a dehydrogenation catalyst which can be effected by lowering the hydrogen gas pressure, generally to pressures greater than 0.1 bar or raising the temperature to less than 250° C.

Abstract: A process is provided for the transport and storage of hydrogen by reversible sorption and containment within carbon-metal hybrid materials. The process comprises contacting a carbon-metal hybrid composition with a hydrogen-containing gas at conditions of temperature and pressure whereby the carbon-metal hybrid composition sorbs the hydrogen gas. The hydrogen that is sorbed in the carbon-metal composition is subsequently released by lowering the H2 pressure and/or increasing the temperature to levels which cause desorption of the hydrogen gas.

Abstract: A process is provided for the transport and storage of hydrogen by reversible sorption and containment within carbon-metal hybrid materials. The process comprises contacting a carbon-metal hybrid composition with a hydrogen-containing gas at conditions of temperature and pressure whereby the carbon-metal hybrid composition sorbs the hydrogen gas. The hydrogen that is sorbed in the carbon-metal composition is subsequently released by lowering the H2 pressure and/or increasing the temperature to levels which cause desorption of the hydrogen gas.