Abstract: A cryogenic refrigeration system for lyophilization is disclosed. The cryogenic refrigeration system includes a cryogenic heat exchanger system adapted for vaporizing a liquid cryogen and using the gaseous cryogen to cool heat transfer fluid and a heat transfer cooling circuit that cools the lyophilization chamber as well as the condenser. The disclosed heat transfer cooling circuit includes a primary recirculation loop adapted for cooling the lyophilization chamber with the heat transfer fluid, a secondary recirculation loop adapted for cooling a condenser with the heat transfer fluid, and one or more valves operatively coupling the cryogenic heat exchanger system, the primary recirculation loop, and the secondary recirculation loop.

Abstract: A sparger for delivering fluid comprising a sparger pipe for carrying the fluid from a fluid source and downwardly directed nozzles to direct the delivery of fluid is disclosed. A substantially vertical connection pipe connects the sparger to the nozzles. Also, a method of delivering oxygen to an oxygen-depleted zone in the bottom of the fermenter using the sparger is disclosed.

Abstract: A method and condenser apparatus for cleaning a gas of condensable vapor employing a cryogenic liquid which is caused to boil evenly along the condenser length and wherein the gas flow through the condenser is in the downward direction in evenly divided flows countercurrently to the flow of boiled cryogen.

Abstract: A method of manufacturing a field effect transistor with a dual-spacer structure. A substrate having a first device region and a second device region is provided. The first device region comprises a first gate formed over the substrate and the second device region comprises a second gate formed over the substrate. A first dielectric layer is formed over the substrate. A second dielectric layer is formed on the first dielectric layer. A portion of the second dielectric layer is removed to expose a portion of the first dielectric layer in the second device region. A portion of the remaining second dielectric layer is removed to form a first spacer on the second dielectric layer on the sidewall of the first gate. A portion of the first dielectric layer is removed to form a second spacer on the sidewall of the second gate. The first spacer and the remaining second dielectric layer between the first spacer and the first gate together form a third spacer.

Abstract: A method of manufacturing a field effect transistor with a dual-spacer structure. A substrate having a first device region and a second device region is provided. The first device region comprises a first gate formed over the substrate and the second device region comprises a second gate formed over the substrate. A first dielectric layer is formed over the substrate. A second dielectric layer is formed on the first dielectric layer. A portion of the second dielectric layer is removed to expose a portion of the first dielectric layer in the second device region. A portion of the remaining second dielectric layer is removed to form a first spacer on the second dielectric layer on the sidewall of the first gate. A portion of the first dielectric layer is removed to form a second spacer on the sidewall of the second gate. The first spacer and the remaining second dielectric layer between the first spacer and the first gate together form a third spacer.

Abstract: A method for improving the quality of a deposited layer over a silicon substrate in a selective deposition where the silicon substrate has a native oxide layer thereon. A plasma reaction using a halogen compound as a reactive agent is performed so that the native oxide layer is transformed into a silicon halide layer and then removed at low pressure. A layer of the desired material is formed over the native oxide free silicon substrate surface by selective deposition.