Abstract: The present disclosure provides improved thin film photovoltaic devices and related methods of fabrication. More particularly, the present disclosure provides improved CdTe photovoltaic devices and related fabrication methods. Disclosed is a novel thin film photovoltaic device and means for its fabrication. An exemplary device includes a metal oxide layer between the absorber layer and the rear electrode, resulting in an ohmic back contact and having improved device stability. The metal oxide layer can include at least one of silver oxide or copper oxide, and may additionally contain nickel oxide, molybdenum oxide, and/or vanadium oxide. The present disclosure is directed towards formation of a ohmic back contact for solar cells, the back contact having improved stability. In certain embodiments, the present disclosure provides for an ohmic contact to p-type II-VI semiconductors, and to the fabrication of solar cells having improved stability, and to solar panels incorporating such back contact schemes.

Abstract: The present disclosure provides improved thin film photovoltaic devices and related methods of fabrication. More particularly, the present disclosure provides improved CdTe photovoltaic devices and related fabrication methods. Disclosed is a novel thin film photovoltaic device and means for its fabrication. An exemplary device includes a metal oxide layer between the absorber layer and the rear electrode, resulting in an ohmic back contact and having improved device stability. The metal oxide layer can include at least one of silver oxide or copper oxide, and may additionally contain nickel oxide, molybdenum oxide, and/or vanadium oxide. The present disclosure is directed towards formation of a ohmic back contact for solar cells, the back contact having improved stability. In certain embodiments, the present disclosure provides for an ohmic contact to p-type II-VI semiconductors, and to the fabrication of solar cells having improved stability, and to solar panels incorporating such back contact schemes.

Abstract: The present invention is directed to methods for depositing doped and/or alloyed semiconductor layers, an apparatus suitable for the depositing, and products prepared therefrom.

Abstract: Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Abstract: A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition. Optionally, an activated hydrogen-containing composition is introduced into the deposition chamber during film deposition. The activated hydrogen-containing composition is formed by exposing hydrogen gas to microwave radiation.

Abstract: A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition.

Abstract: The present invention provides method of treating semiconductor surfaces (e.g., CIGS) using various solvents (including ionic solvents and eutectics), and methods preparing photovoltaic cells comprising treated CIGS materials.

Abstract: A method for sputtering a textured zinc oxide coating onto a substrate by reactive-environment hollow cathode sputtering comprises providing a sputter reactor that has a cathode channel and a flow exit end. The cathode channel allows a gas stream to flow therein. This cathode channel is at least partially defined by a channel-defining surface that includes at least one zinc-containing target. A gas is flowed through the channel, such that the gas emerges from the flow exit. A plasma is then generated such that material is sputtered off the channel-defining surface to form a gaseous mixture containing zinc atoms that is transported to the substrate. A reactive gas is then introduced into the sputter reactor so that the reactive gas reacts with the zinc-containing gaseous mixture to form the textured zinc oxide coating.

Abstract: The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the channel-defining surface include at least one target material. Gas is flowed through the channel wherein at least a portion of the gas is a non-laminarly flowing gas. While the gas is flowing through the channel a plasma is generated causing target material to be sputtered off the channel-defining surface to form a gaseous mixture containing target atoms that is transported to the substrate. In an important application of the present invention, a method for forming oxide films and in particular zinc oxide films is provided.

Abstract: Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Abstract: Chalcopyrite semiconductors, such as thin films of copper-indium-diselenide (CuInSe2), copper-gallium-diselenide (CuGaSe2), and Cu(Inx,Ga1-x)Se2, all of which are sometimes generically referred to as CIGS, have become the subject of considerable interest and study for semiconductor devices in recent years. They are of particular interest for photovoltaic device or solar cell absorber applications. The quality of Cu(In,Ga)Se2 thin films, as an example of chalcopyrite films, is controlled by making spectrophotometric measurements of light reflected from the film surface. This permits the result of non-contacting measurements of films in a continuous production environment to be fed back to adjust the production conditions in order to improve or maintain the quality of subsequently produced film.

Abstract: Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Abstract: Chalcopyrite semiconductors, such as thin films of copper-indium-diselenide (CuInSe2), copper-gallium-diselenide (CuGaSe2), and Cu(Inx,Ga1-x)Se2, all of which are sometimes generically referred to as CIGS, have become the subject of considerable interest and study for semiconductor devices in recent years. They are of particular interest for photovoltaic device or solar cell absorber applications. The quality of Cu(In,Ga)Se2 thin films, as an example of chalcopyrite films, is controlled by making spectrophotometric measurements of light reflected from the film surface. This permits the result of non-contacting measurements of films in a continuous production environment to be fed back to adjust the production conditions in order to improve or maintain the quality of subsequently produced film.

Abstract: A radiant energy sensitive device formed by a radiant energy transmissive conductor of tin oxide with an overlying radiant energy transmissive layer of zinc oxide, that, in turn, underlies a radiant energy sensitive layer, with the result that the combination of the two radiant energy transmissive layers improves the performance of the radiant energy sensitive structure with respect to energy passing through the radiant energy transmissive layer.

Abstract: Energy responsive apparatus in which a semiconductor is in contact with an energy transmissive conductor. An electrode with insulated face and side surfaces has an uninsulated surface in contact with the semiconductor, and a further electrode is in contact with the energy transmissive conductor and the semiconductor simultaneously. Or the energy transmissive conductor is in simultaneous further contact with the semiconductor and the further electrode. The insulator is an oxide of the electrode material.

Abstract: A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Abstract: Method of counteracting the effects of undesired contaminants in an amorphous semiconductor, and the resulting semiconductor product. An overcompensating agent is incorporated in the semiconductor in a restricted or limited region which is less than the entirety of the semiconductor body. The semiconductor is desirably of amorphous silicon. The undesired contaminant is a p acceptor and the compensating dopant is an n donor. Alternatively, the undesired contaminant can be an n donor and the compensating dopant can be a p acceptor. Typical p acceptors are residual boron and typical n donors are phosphorous. The compensation takes place over the range from about 1 to about 25% of the maximum thickness of the region of compensation. The compensating dopant is present in a limited amount ranging from about 1 part to about 50 parts per million.

Abstract: Removal of defects from semiconductors by applying a reverse bias potential to the semiconductors and irradiating the semiconductors with photon energy greater than their bangap energies.

Abstract: Directed energy conversion of semiconductors by the directed energy fusion of a selective region of a semiconductor layer to provide a conductive path through the layer. A conductive path is formed through a semiconductive layer through opposed electrodes by conversion of the semiconductive region, for example, by laser energy applied to change the structure in the region extending between the electrodes. The change in conductivity of the path is monitored and used to control the formation of the conductive path by controlling the directed energy source.

Abstract: A semiconductor device in which particles of semiconductive material extend as separate chains from respective first and second contacts. When one of the contacts is of p-type material, the conductive materials that extend from it are of likewise p-material. Similarly, when the contact is of n-type material, the chain that extends from it is also of n-material. In any case the particles can include both p-type and n-type. One of the contacts can have a prescribed work function and the other contact have a lower work function in order to produce a prescribed junction between the two contacts. In addition the contacts may be polymeric. The particulate bodies may range in size from 10 to about 3000 angstroms in diameter. The n-type particles provide a continuous path for electrons and the p-type particles provide a continuous path for holes. The particles are adhered to one another by an inorganic or organic binder, pressure, heat treatment or thermal fusion.