Patents by Inventor Alan F. Cattell

Alan F. Cattell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5206145
    Abstract: An apparatus is provided for measuring the concentration of a substance in a sample solution. The apparatus comprises first electrode means, second electrode means and an enzyme channel between the first and second electrode means. The enzyme channel contains an enzyme for catalyzing a reaction of the substance whose concentration is to be measured. In use, a known volume of the sample solution is presented to the first electrode means in a test solution including an excess of a mediator, one of reduction or oxidation of the mediator being coupled to the reaction of the substance. The first electrode means is arranged to ensure that the mediator is respectively completely oxidized or reduced, and also to remove any interferent species. The test solution is then passed through the enzyme channel so as to permit reaction of all of the substance present in the solution, whereby a quantity of the mediator is respectively reduced or oxidized.
    Type: Grant
    Filed: August 23, 1991
    Date of Patent: April 27, 1993
    Assignee: Thorn EMI plc
    Inventor: Alan F. Cattell
  • Patent number: 4552782
    Abstract: A method of electroluminescent panel manufacture in which a doped zinc chalcogenide phospher film--for example manganese doped zinc sulphide, is deposited upon an electrode bearing substrate in the presence of a hydrogen enriched atmosphere--for example a 90%:10% argon:hydrogen atmosphere. This is followed by rapid anneal treatment, the substrate being raised quickly to a temperature of 450.degree. C., or greater, and cooled rapidly. It is preferable that, prior to film deposition, the substrate is pretreated by baking in the hydrogen enriched atmosphere. An additional current density limiting film may be applied--a film of low resistance cermet material--for example silica/nickel 20% Ni in SiO.sub.2, or a film of amorphous silicon.
    Type: Grant
    Filed: July 26, 1984
    Date of Patent: November 12, 1985
    Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
    Inventors: Alan F. Cattell, John Kirton, Peter Lloyd
  • Patent number: 4496610
    Abstract: A method in which a phosphor film of manganese doped zinc chalcogenide is produced by chemical vapor deposition from alkyl zinc vapor and the gaseous hydride of the chalcogen. The manganese dopant is introduced uniformly during deposition by decomposition of tricarbonyl alkylcyclopentadienyl manganese: ##STR1## where here R denotes the alkyl radical. Preferably dimethyl zinc and tricarbonyl methylcyclopentadienyl manganese are used.The phosphor produced may be one of the following manganese doped compounds: zinc sulphide, zinc selenide, zinc sulphur selenide, zinc oxy-sulphide, zinc oxy-selenide or zinc cadmium sulphide.
    Type: Grant
    Filed: March 22, 1983
    Date of Patent: January 29, 1985
    Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
    Inventors: Alan F. Cattell, Brian Cockayne, Peter J. Wright, John Kirton