Patents by Inventor Alan Frederick Norris

Alan Frederick Norris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SOI substrate contact with extended silicide area
    Patent number: 7939896
    Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: May 10, 2011
    Assignee: International Business Machines Corporation
    Inventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
  • SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
    Publication number: 20100084736
    Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.
    Type: Application
    Filed: November 6, 2009
    Publication date: April 8, 2010
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
  • SOI substrate contact with extended silicide area
    Patent number: 7675121
    Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.
    Type: Grant
    Filed: October 8, 2007
    Date of Patent: March 9, 2010
    Assignee: International Business Machines Corporation
    Inventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
  • SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
    Publication number: 20090090970
    Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.
    Type: Application
    Filed: October 8, 2007
    Publication date: April 9, 2009
    Inventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
  • SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
    Publication number: 20090093092
    Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.
    Type: Application
    Filed: October 8, 2007
    Publication date: April 9, 2009
    Inventors: DINH DANG, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman