Patents by Inventor Alan Gott

Alan Gott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POROUS RF SWITCH FOR REDUCED CROSSTALK
    Publication number: 20220254631
    Abstract: A layered structure includes a substrate, a porous layer over the substrate, an epitaxial layer grown directly over the porous layer, and a semiconductor device in the epitaxial layer. The porous layer has a higher resistivity than the substrate. A porosity of the porous layer reduces radio frequency (RF) bleeding from the semiconductor device into the substrate.
    Type: Application
    Filed: April 29, 2022
    Publication date: August 11, 2022
    Inventors: Richard HAMMOND, Drew Nelson, Alan Gott, Rodney Pelzel, Andrew Clark
  • Semiconductor material having tunable permittivity and tunable thermal conductivity
    Patent number: 11355340
    Abstract: A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: June 7, 2022
    Assignee: IQE plc
    Inventors: Richard Hammond, Drew Nelson, Alan Gott, Rodney Pelzel, Andrew Clark
  • SEMICONDUCTOR MATERIAL HAVING TUNABLE PERMITTIVITY AND TUNABLE THERMAL CONDUCTIVITY
    Publication number: 20210020436
    Abstract: A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.
    Type: Application
    Filed: January 14, 2020
    Publication date: January 21, 2021
    Inventors: Richard Hammond, Drew Nelson, Alan Gott, Rodney Pelzel, Andrew Clark