Abstract: A method to improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A bias current for an amplifying transistor of an amplifier circuit is determined based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.

Abstract: A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A control circuit determines a bias current for an amplifying transistor of an amplifier circuit based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.

Abstract: A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A control circuit determines a bias current for an amplifying transistor of an amplifier circuit based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.

Abstract: A system and method improve amplifier efficiency of operation relative to that of a matching circuit with fixed matching conditions. A power level representing a level of transmission power from an amplifier circuit and an indicator of amplifier circuit operation are provided. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. The matching conditions for a matching circuit of an amplifying transistor are adjusted based at least in part on the power level and the indication where the matching conditions are different for channels at an edge of a channel band than for channels nearer a center of the channel band.

Abstract: A system and method improve amplifier efficiency of operation relative to that of a matching circuit with fixed matching conditions. A power level representing a level of transmission power from an amplifier circuit and an indicator of amplifier circuit operation are provided. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. The matching conditions for a matching circuit of an amplifying transistor are adjusted based at least in part on the power level and the indication where the matching conditions are different for channels at an edge of a channel band than for channels nearer a center of the channel band.

Abstract: A system and method improve amplifier efficiency of operation relative to that of an amplifying transistor with a fixed bias current. A power level representing a level of transmission power from an amplifier circuit and an indicator of amplifier circuit operation are provided. The indicator is at least one of channel, channel bandwidth, out-of band spectral requirements, spectral mask requirements, error vector magnitude, modulation rate, and modulation type. The amplifying transistor is biased with a bias current that is determined based at least in part on the power level and the indication where the bias current is different for channels at an edge of a channel band than for channels nearer a center of the channel band.

Abstract: An electronic module that operates at various radio frequency standards is provided. The module includes a first integrated circuit die formed in a first semiconductor substrate and manufactured using a first semiconductor process. Disposed within the first integrated circuit is the first signal conditioning circuit for performing a function and the first and second ancillary circuits. The first ancillary circuit electrically coupled to the first signal conditioning circuit for use by the first signal conditioning circuit during operation thereof. The second ancillary circuit is for other than being used by the first signal conditioning circuit during operation thereof since the second integrated circuit die is electrically coupled to the second ancillary circuit and formed in the second semiconductor substrate and co-located with the first integrated circuit within the module.

Abstract: A first signal conditioning circuit is formed from a first portion, a second portion and a third portion. Signal conditioning functions of each of these portions are facilitated by a predetermined type of integrated semiconductor die within which they are formed. Two different semiconductor dies are thus provided for facilitating integration of the first through third signal conditioning portions therein. Wire bonds are provided between the two different semiconductor dies in order to form circuit paths between the different first through third portions. The signal routing using between the two different semiconductor dies provides for completing of the first signal conditioning circuit having a first signal conditioning function. For example, circuits such as interstage matching circuits are disposed on a different semiconductor die than power amplifier circuits.