Abstract: This invention relates to a device for electrooptic modulation of an optical beam. The device is a laminate comprising a coherent film of a conjugated polymer having semi-conducting properties as the active component laminated with two or more layers of electrically conducting, insulating or semi-conducting materials. At least the active component in the laminate is capable of interacting with the optical beam when under the influence of an electric signal and thereby result in a modulated beam. Means are provided for (i) establishing electrical contact with one or more layers of the laminate so as to enable an electrical signal to be applied across the active component and (ii) detection of the extent of modulation of the modulated beam emerging from the active component layer.

Abstract: A junction field effect transistor has a substrate forming a junction with a layer of semiconductor material which has a gate, a source and a drain therein. The thickness of the n-type layer underlying the source is substantially greater than that underlying the gate (for example the ratio of n-thickness below the gate to that below the source is 1 to 2.53) in order to reduce the parasitic resistance as compared to conventional JFETs.