Abstract: An apparatus and process for in-situ measurement of thin film thickness, ash rate, and end point generally include generating and measuring shallow angle interference patterns. The apparatus generally includes a chamber having a first viewing port and a second viewing port. The first viewing port includes receiving optics configured to receive light at a shallow angle from a surface of a substrate processed therein. The second port includes a broadband illumination source and is preferably disposed in a sidewall opposite the receiving optics. The process includes calculating the thin film thickness, ash rate, and end point from the interference patterns.

Abstract: An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.

Abstract: Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

Abstract: An apparatus and process for in-situ measurement of thin film thickness, ash rate, and end point generally include generating and measuring shallow angle interference patterns. The apparatus generally includes a chamber having a first viewing port and a second viewing port. The first viewing port includes receiving optics configured to receive light at a shallow angle from a surface of a substrate processed therein. The second port includes a broadband illumination source and is preferably disposed in a sidewall opposite the receiving optics. The process includes calculating the thin film thickness, ash rate, and end point from the interference patterns.

Abstract: An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.