Abstract: An integrated circuit (IC) device includes a redistribution line over a substrate, wherein a first angle between a topmost surface of the redistribution line and a sidewall of the redistribution line is within a first angle range, a second angle between a bottommost surface of the redistribution line and the sidewall of the redistribution line is within a second angle range, and the second angle range is different from the first angle range. The IC device further includes a passivation layer over the redistribution line, wherein a bottommost surface of the passivation layer is below the bottommost surface of the redistribution line.

Abstract: An integrated circuit (IC) device includes a redistribution line over a substrate, wherein an entire sidewall of the redistribution line is curved. The IC device further includes a passivation layer over the redistribution line, wherein a distance from a bottommost surface of the passivation layer to the substrate is less than a distance from a bottommost surface of the redistribution line to the substrate. The IC device further includes a polymer layer over the passivation layer.

Abstract: An integrated circuit (IC) device includes a redistribution line over a substrate, wherein an entire sidewall of the redistribution line is curved. The IC device further includes a passivation layer over the redistribution line, wherein a distance from a bottommost surface of the passivation layer to the substrate is less than a distance from a bottommost surface of the redistribution line to the substrate. The IC device further includes a polymer layer over the passivation layer.

Abstract: An integrated circuit (IC) device includes a first passivation layer over a substrate. The IC device further includes a redistribution line over the first passivation layer, wherein the redistribution line has a barrel-shaped profile. The IC device further includes a second passivation layer over the redistribution line. The IC device further includes a polymer layer over the second passivation layer.

Abstract: A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device further includes a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity. The semiconductor device further includes a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.

Abstract: A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device includes a dielectric layer over the conductive pad, wherein the dielectric layer comprises silicon oxide. The semiconductor device includes a first passivation layer directly over the dielectric layer, wherein the first passivation layer comprises silicon oxide. The semiconductor device includes a second passivation layer directly over the first passivation layer, wherein the second passivation layer comprises silicon nitride.

Abstract: An integrated circuit (IC) device includes a first passivation layer over a substrate. The IC device further includes a redistribution line over the first passivation layer, wherein the redistribution line has a barrel-shaped profile. The IC device further includes a second passivation layer over the redistribution line. The IC device further includes a polymer layer over the second passivation layer.

Abstract: A method of manufacturing a semiconductor structure. The method includes depositing a conductive material over a substrate, and removing a portion of the conductive material to form a conductive structure having a barrel shape. A width of a body portion of the conductive structure is greater than a width of an upper portion and a width of a bottom portion of the conductive structure.

Abstract: A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device includes a dielectric layer over the conductive pad, wherein the dielectric layer comprises silicon oxide. The semiconductor device includes a first passivation layer directly over the dielectric layer, wherein the first passivation layer comprises silicon oxide. The semiconductor device includes a second passivation layer directly over the first passivation layer, wherein the second passivation layer comprises silicon nitride.

Abstract: A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD). The first deposition process is different from HDPCVD. A thickness of the dielectric layer is sufficient to prevent charges generated by depositing the first passivation layer from reaching the conductive pad.

Abstract: A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD). The first deposition process is different from HDPCVD. A thickness of the dielectric layer is sufficient to prevent charges generated by depositing the first passivation layer from reaching the conductive pad.

Abstract: A method of manufacturing a semiconductor structure. The method includes depositing a conductive material over a substrate, and removing a portion of the conductive material to form a conductive structure having a barrel shape. A width of a body portion of the conductive structure is greater than a width of an upper portion and a width of a bottom portion of the conductive structure.