Abstract: Systems and apparatus for increasing combustion efficiency during combustion of a carbon-containing fuel such as a fossil fuel. The systems and apparatus utilize catalytically reactive particles within a reaction chamber, typically silica or alumina, that interact with waste exhaust gases produced during combustion of the fuel in order to produce a degrading atmosphere of hydroxy radicals or other reactive species. The degrading atmosphere apparently migrates to the source of combustion and increases the efficiency of combustion as evidenced by the reduction or elimination of soot and other pollutants normally produced. Typically, the reaction chamber is maintained at a temperature in a range from about 30° C. to about 600° C. Moisture is provided by the waste exhaust gases in order to catalyze formation of hydroxyl radicals by the catalytically reactive particles.

Abstract: Systems and apparatus for degrading and cleaning combustion products of carbon-containing fuels such as fossil fuels. The systems and apparatus utilize catalytically reactive particles that are at least partially suspended by moving gases within a reaction chamber and maintained at a temperature sufficient to cause the suspended media particles, typically silica sand, silica gel, or alumina, to become catalytically reactive in the presence of moisture. Typically, the reaction chamber is maintained at a temperature in a range from about 30° C. to about 500° C. Moisture may be provided by the waste exhaust, although additional moisture may be introduced into the reaction chamber in order to maintain reactivity of the catalytically reactive particles. The systems and apparatus can be adapted to be used in combination with diesel engines or other internal combustion engines and industrial burners. The exhaust gases containing the incomplete combustion products can be further pressurized as needed.

Abstract: Systems and apparatus for increasing combustion efficiency during combustion of a carbon-containing fuel such as a fossil fuel. The systems and apparatus utilize catalytically reactive particles within a reaction chamber, typically silica or alumina, that interact with waste exhaust gases produced during combustion of the fuel in order to produce a degrading atmosphere of hydroxy radicals or other reactive species. The degrading atmosphere apparently migrates to the source of combustion and increases the efficiency of combustion as evidenced by the reduction or elimination of soot and other pollutants normally produced. Typically, the reaction chamber is maintained at a temperature in a range from about 30° C. to about 600° C. Moisture is provided by the waste exhaust gases in order to catalyze formation of hydroxyl radicals by the catalytically reactive particles.

Abstract: Systems and apparatus for muffling sounds produced by an internal combustion engine, and optionally catalytically degrading pollutants within waste exhaust gases. The systems and apparatus utilize a bed of particles within a muffling chamber. The gases are introduced using a diffusion tube with holes therethrough. The muffling particles preferably include silica or alumina, which can also catalytically degrade pollutants. Typically, the muffling/reaction chamber is maintained at a temperature in a range from about 50° C. to about 500° C., which is much lower than temperatures within conventional muffling systems for diesel engines. The muffling systems operate as substantially lower back pressure compared to conventional muffling systems. The systems and apparatus can be adapted to be used in combination with diesel engines or other internal combustion engines and industrial burners.

Abstract: Systems and apparatus for degrading and cleaning combustion products of carbon-containing fuels such as fossil fuels. The systems and apparatus utilize catalytically reactive particles that are at least partially suspended by moving gases within a reaction chamber and maintained at a temperature sufficient to cause the suspended media particles, typically silica sand, silica gel, or alumina, to become catalytically reactive in the presence of moisture. Typically, the reaction chamber is maintained at a temperature in a range from about 30° C. to about 500° C. Moisture may be provided by the waste exhaust, although additional moisture may be introduced into the reaction chamber in order to maintain reactivity of the catalytically reactive particles. The systems and apparatus can be adapted to be used in combination with diesel engines or other internal combustion engines and industrial burners. The exhaust gases containing the incomplete combustion products can be further pressurized as needed.

Abstract: Systems and apparatus for muffling sounds produced by an internal combustion engine, and optionally catalytically degrading pollutants within waste exhaust gases. The systems and apparatus utilize a bed of particles within a muffling chamber. The gases are introduced using a diffusion tube with holes therethrough. The muffling particles preferably include silica or alumina, which can also catalytically degrade pollutants. Typically, the muffling/reaction chamber is maintained at a temperature in a range from about 50° C. to about 500° C., which is much lower than temperatures within conventional muffling systems for diesel engines. The muffling systems operate as substantially lower back pressure compared to conventional muffling systems. The systems and apparatus can be adapted to be used in combination with diesel engines or other internal combustion engines and industrial burners.

Abstract: Methods and systems for catalyzing the low temperature formation of silicon nitride. The methods and systems utilize catalytically reactive silica particles that are suspended by moving air within a reaction chamber and which are maintained at a temperature sufficient to cause the suspended silica particles to become catalytically reactive in the presence of carbon and nitrogen gas. Typically, the reaction chamber is maintained at a temperature in a range from about 150° C. to about 500° C. Moisture is generally provided by the organic matter, although additional moisture may be introduced into the reaction chamber in order to maintain reactivity of the silica particles. The silicon nitride is preferably deposited onto the surface of a metallic substrate, which might be located either within or externally to the reaction chamber. Depending on the ratio of oxygen to nitrogen provided within the reaction chamber, silicon nitride or a mixture of silicon nitride and silicon oxynitride will be produced.

Abstract: Systems and apparatus for catalytically oxidizing organic matter, particularly the incomplete combustion products of carbon-containing fuels such as fossil fuels. The systems and apparatus utilize catalytically reactive particles that are suspended by moving air within a reaction chamber and maintained at a temperature sufficient to cause the suspended media particles, typically silica sand, silica gel, or alumina, to become catalytically reactive in the presence of moisture. Typically, the reaction chamber is maintained at a temperature in a range from about 100° C. to about 500° C. Moisture may be provided by the waste exhaust, although additional moisture may be introduced into the reaction chamber in order to maintain reactivity of the catalytically reactive particles. The systems and apparatus can be adapted to be used in combination with diesel engines or other internal combustion engines and industrial burners.

Abstract: Methods for catalyzing the low temperature, oxidative destruction of organic matter, particularly the incomplete combustion products of carbon-containing fuels such as fossil fuels. The methods and systems utilize a catalytically reactive media that is suspended by moving air within a reaction chamber and that is maintained at a temperature sufficient to cause the suspended media particles, typically silica sand, silica gel, or alumina, to become catalytically reactive in the presence of moisture. Typically, the reaction chamber is maintained at a temperature in a range from about 200.degree. C. to about 500.degree. C. Moisture may be provided by the organic matter, although additional moisture may be introduced into the reaction chamber in order to maintain reactivity of the media particles. The apparatus can be adapted to be used in combination with diesel engines or other internal combustion engines and industrial burners.

Abstract: Methods and Systems for catalyzing the oxidative destruction of animal tissues, particularly medical waste and animal and human corpses. A reaction chamber containing a fluidizable media is maintained at a temperature sufficient to cause the fluidized media, typically silica sand, silica gel, or alumina, to become highly reactive in the presence of moisture. Typically the reaction chamber is maintained at a temperature in a range from about 400.degree. C. to about 500.degree. C. The methods and systems quickly and efficiently destroy medical waste and a variety of other animal tissues such as corpses. The apparatus can be small to fit into small rooms or large to serve institutional needs. It replaces incineration, autoclaving, plasma formation, and the like as the preferred method for effectively disinfecting and destroying medical wastes and corpses.

Abstract: A method and apparatus for continuously forming and depositing a layer of monomolecular amphiphilic molecules on a substrate, which include the continuous or intermittent removal of unused film after a substrate dipping. The amount of "dwell time" in which the film resides on the surface of the support media is controlled. A rotatable barrier provides a movable "film front" to achieve repeatable film pressures, consistencies and viscosities of high precision and accuracy.

Abstract: A method for the fabrication of semiconductor devices, particularly bipolar silicon devices, having ultra-shallow but relatively large junctions. The process is characterized by the use of relatively low temperatures for critical oxidations steps and for ion-implantation steps. The region implantations are performed at low temperature and the necessary annealing steps are deferred until all of the regions are in place. Then a single pulse-annealing step is employed, to minimize further movement of the region junctions. Processing-induced defects are thereby reduced to a minimum, and the process can be used to produce ultra-shallow junctions in a reliable and repeatable manner.

Abstract: A zig-zag V-groove configuration for use in V-MOS transistors is disclosed. Instead of merely forming parallel rows of V-grooves, a zig-zag configuration is used, utilizing two different directions for the V-grooves, at least one of which is not the conventional <011> direction. This configuration can be used with either the ladder or interdigitated configuration for the source contact and gate metals.

Abstract: A bipolar semiconductor is manufactured by forming a plurality of grooves along the vertical (111) planes in a high resistivity epitaxial silicon layer which is disposed on an N+ (110) oriented substrate. Low resistivity epitaxial silicon of the same conductivity type is then used to fill in the grooves, thus forming alternate vertical regions of high and low resistivity. A base region is then diffused into said epitaxial layer and a plurality of emitters regions are diffused into said base region at locations directly above the low resistivity epitaxial regions.

Abstract: A method for adhering a passivation layer to gold regions in a semiconductor device. The method comprises the steps of providing a semiconductor device having at least one gold region formed thereon. A layer of a metal reactive with the gold is then deposited over the gold region so as to form a gold-reactive metal interface region. The gold and metal are then reacted at the interface region. Any metal which does not react is removed so as to expose a reacted interface region. Finally, a layer of passivation material is deposited over the exposed reacted interface region. Because the passivation material is then in contact with reacted gold regions, its adherence thereto is substantially increased.

Abstract: A simplified method of fabricating V-groove junction field effect transistors using only two masking steps. The first masking step opens regions in an ohmic refractory metal layer deposited on a doped semiconductor wafer. V-grooves are anisotropically etched into the wafer through the openings, thereby defining source and drain regions and outer isolation V-grooves. The wafer is then coated with a passivating layer. The second masking step creates openings through the passivation layer to the source and drain regions, and electrical contacts to those regions are made. An ohmic contact to the back surface of the wafer forms the gate electrode. Multiple source and drain regions may be created between the outer isolation V-grooves and electrically parallel for a greater current rating.

Abstract: Flat and parallel depositions of low pressure chemical vapor deposited (LPCVD) polycrystalline intrinsic silicon are formed on both sides of a wafer of P-I-N <100> substrate of silicon to support the wafer during subsequent polish removal from the top surface. This structurally reinforces the crystal wafer and helps prevent warpage and cracking during subsequent handling.

Abstract: Flat and parallel depositions of low pressure chemical vapor deposited (LPCVD) polycrystalline intrinsic silicon are formed on both sides of a wafer of P-I-N <100> V-grooved substrate of silicon to support the wafer during subsequent polish removal from the top surface. This structurally reinforces the crystal wafer and helps prevent warpage and cracking during subsequent handling.