Patents by Inventor Alan Lai-Wai Yan

Alan Lai-Wai Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral RF MOS devices
    Patent number: 6762456
    Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi
    Type: Grant
    Filed: February 8, 2003
    Date of Patent: July 13, 2004
    Assignee: Sirenza Microdevices, Inc.
    Inventors: Pablo D'Anna, Alan Lai-Wai Yan
  • MULTIPLE CONDUCTIVE PLUG STRUCTURE INCLUDING AT LEAST ONE CONDUCTIVE PLUG REGION AND AT LEAST ONE BETWEEN-CONDUCTIVE-PLUG REGION FOR LATERAL RF MOS DEVICES
    Publication number: 20040124462
    Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi
    Type: Application
    Filed: February 8, 2003
    Publication date: July 1, 2004
    Applicant: SIRENZA MICRODEVICES, INC.
    Inventors: Pablo D'Anna, Alan Lai-Wai Yan
  • Multiple conductive plug structure for lateral RF MOS devices
    Patent number: 6686627
    Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi
    Type: Grant
    Filed: December 26, 2001
    Date of Patent: February 3, 2004
    Assignee: Sirenza Microdevices, Inc.
    Inventors: Pablo D'Anna, Alan Lai-Wai Yan
  • Multiple conductive plug structure for lateral RF MOS devices
    Publication number: 20030116785
    Abstract: A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivi
    Type: Application
    Filed: December 26, 2001
    Publication date: June 26, 2003
    Applicant: XEMOD, Inc.
    Inventors: Pablo D'Anna, Alan Lai-Wai Yan