Patents by Inventor Alan Laulusa

Alan Laulusa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a capacitor
    Patent number: 5753558
    Abstract: A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO.sub.2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF.sub.4 and CHF.sub.3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.
    Type: Grant
    Filed: April 18, 1997
    Date of Patent: May 19, 1998
    Assignee: Micron Technology, Inc.
    Inventors: Salman Akram, Charles Turner, Alan Laulusa
  • Semiconductor processing method employing an angled sidewall
    Patent number: 5658818
    Abstract: A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO.sub.2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF.sub.4 and CHF.sub.3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.
    Type: Grant
    Filed: August 18, 1995
    Date of Patent: August 19, 1997
    Assignee: Micron Technology, Inc.
    Inventors: Salman Akram, Charles Turner, Alan Laulusa
  • Method of forming a capacitor
    Patent number: 5444013
    Abstract: A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO.sub.2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF.sub.4 and CHF.sub.3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.
    Type: Grant
    Filed: November 2, 1994
    Date of Patent: August 22, 1995
    Assignee: Micron Technology, Inc.
    Inventors: Salman Akram, Charles Turner, Alan Laulusa