Abstract: Embodiments of the invention enable detection of edge damages in semiconductor devices. To this purpose, one or more continuity structures may be provided, where each structure comprises an undulating arrangement disposed between active circuits of the semiconductor device and a perimeter of the metallization layers. The continuity structure(s) forms one or more conductive paths intersecting a plurality of metallization layers in the semiconductor device. A relative change in an electrical characteristic of the continuity structure(s) is monitored to ascertain whether or not an edge damage is present.

Abstract: Dispersion may be managed in an optical network configured to transmit differential phase shift keying (DPSK) modulated signals by allowing accumulation of dispersion to thousands of ps/nm before compensating. A dispersion map providing a negative average dispersion and a minimum dispersion wavelength outside of the signal band may be employed.