Patents by Inventor Alan M. Schoepp
Alan M. Schoepp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230260759Abstract: Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.Type: ApplicationFiled: October 22, 2021Publication date: August 17, 2023Inventors: Eric A. Hudson, Andrew Clark Serino, Thad Nicholson, Ramesh Chandrasekharan, Alan M. Schoepp
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Publication number: 20220308462Abstract: Systems and techniques for dry deposition of extreme ultra-violet-sensitive (EUV-sensitive) photoresist layers are discussed. In some such systems, a processing chamber may be provided that features a multi-plenum showerhead that is configured to receive a vaporized organometallic precursor in one plenum and a vaporized counter-reactant thereof in another plenum. The two vaporized reactants may be delivered to a reaction space within the processing chamber and over a wafer support that supports the substrate.Type: ApplicationFiled: June 22, 2020Publication date: September 29, 2022Inventors: Butch Berney, Alan M. Schoepp, Timothy William Weidman, Kevin Li Gu, Chenghao Wu, Katie Lynn Nardi, Boris Volosskiy, Clint Edward Thomas, Thad Nicholson
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Publication number: 20210143032Abstract: A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or minors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.Type: ApplicationFiled: May 2, 2019Publication date: May 13, 2021Inventors: Dong Woo PAENG, Yunsang S. KIM, He ZHANG, Keith WELLS, Alan M. SCHOEPP
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Patent number: 10107490Abstract: An improved vaporizer for vaporizing a liquid precursor is provided. The vaporizer may include one or more channels with a relatively large wall-area-to-cross-sectional-flow-area ratio and may be equipped with one or more heater elements configured to heat the channels above the vaporization temperature of the precursor. At least some of the channels may be heated above the vaporization temperature but below the Leidenfrost temperature of the precursor. In some implementations, a carrier gas may be introduced at high speed in a direction generally transverse to the precursor flow to mechanically shear the precursor into droplets. Multiple vaporizers may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.Type: GrantFiled: June 30, 2014Date of Patent: October 23, 2018Assignee: Lam Research CorporationInventors: Colin F. Smith, Harald te Nijenhuis, Jeffrey E. Lorelli, Edward Sung, Kevin Madrigal, Shawn M. Hamilton, Alan M. Schoepp
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Patent number: 9982341Abstract: An improved vaporizer for vaporizing a process fluid is provided. The vaporizer may be assembled from stacked plates and may include one or more plenums with a relatively large wall-area-to-cross-sectional-flow-area ratio. The vaporizer may be equipped with one or more heating elements configured to heat the plenums above the vaporization temperature of the precursor. At least some of the plenums may be heated above the vaporization temperature, but below the Leidenfrost temperature, of the precursor. Multiple stacked plate arrangements may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.Type: GrantFiled: January 30, 2015Date of Patent: May 29, 2018Assignee: Lam Research CorporationInventors: Alan M. Schoepp, Colin F. Smith, Edward Sung
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Patent number: 9673037Abstract: An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.Type: GrantFiled: October 13, 2011Date of Patent: June 6, 2017Assignee: Law Research CorporationInventors: Stephen M. Sirard, Diane Hymes, Alan M. Schoepp
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Patent number: 9431268Abstract: Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of a reaction of anhydrous HF with an activated surface of an oxide, with an emphasis on removal of water generated in the reaction. In certain embodiments the oxide surface is first modified by adsorbing an OH-containing species (e.g., an alcohol) or by forming OH bonds using a hydrogen-containing plasma. The activated oxide is then etched by a separately introduced anhydrous HF, while the water generated in the reaction is removed from the surface of the substrate as the reaction proceeds, or at any time during or after the reaction. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where accurate removal of one or multiple atomic layers of material is desired.Type: GrantFiled: January 5, 2015Date of Patent: August 30, 2016Assignee: Lam Research CorporationInventors: Thorsten Lill, Ivan L. Berry, III, Meihua Shen, Alan M. Schoepp, David J. Hemker
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Publication number: 20160222508Abstract: An improved vaporizer for vaporizing a process fluid is provided. The vaporizer may be assembled from stacked plates and may include one or more plenums with a relatively large wall-area-to-cross-sectional-flow-area ratio. The vaporizer may be equipped with one or more heating elements configured to heat the plenums above the vaporization temperature of the precursor. At least some of the plenums may be heated above the vaporization temperature, but below the Leidenfrost temperature, of the precursor. Multiple stacked plate arrangements may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.Type: ApplicationFiled: January 30, 2015Publication date: August 4, 2016Inventors: Alan M. Schoepp, Colin F. Smith, Edward Sung
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Publication number: 20160196984Abstract: Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of a reaction of anhydrous HF with an activated surface of an oxide, with an emphasis on removal of water generated in the reaction. In certain embodiments the oxide surface is first modified by adsorbing an OH-containing species (e.g., an alcohol) or by forming OH bonds using a hydrogen-containing plasma. The activated oxide is then etched by a separately introduced anhydrous HF, while the water generated in the reaction is removed from the surface of the substrate as the reaction proceeds, or at any time during or after the reaction. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where accurate removal of one or multiple atomic layers of material is desired.Type: ApplicationFiled: January 5, 2015Publication date: July 7, 2016Inventors: Thorsten Lill, Ivan L. Berry, III, Meihua Shen, Alan M. Schoepp, David J. Hemker
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Patent number: 9287110Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.Type: GrantFiled: June 14, 2013Date of Patent: March 15, 2016Assignee: Lam Research CorporationInventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
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Publication number: 20150377481Abstract: An improved vaporizer for vaporizing a liquid precursor is provided. The vaporizer may include one or more channels with a relatively large wall-area-to-cross-sectional-flow-area ratio and may be equipped with one or more heater elements configured to heat the channels above the vaporization temperature of the precursor. At least some of the channels may be heated above the vaporization temperature but below the Leidenfrost temperature of the precursor. In some implementations, a carrier gas may be introduced at high speed in a direction generally transverse to the precursor flow to mechanically shear the precursor into droplets. Multiple vaporizers may be ganged together in series to achieve complete vaporization, if necessary. The vaporizers may be easily disassembleable for cleaning and maintenance.Type: ApplicationFiled: June 30, 2014Publication date: December 31, 2015Inventors: Colin F. Smith, Harald te Nijenhuis, Jeffrey E. Lorelli, Edward Sung, Kevin Madrigal, Shawn M. Hamilton, Alan M. Schoepp
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Patent number: 9053925Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.Type: GrantFiled: April 6, 2011Date of Patent: June 9, 2015Assignee: Lam Research CorporationInventors: Andrew D. Bailey, III, Alan M. Schoepp, Gregory Sexton, Yunsang Kim, William S. Kennedy
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Patent number: 8898928Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.Type: GrantFiled: October 11, 2012Date of Patent: December 2, 2014Assignee: Lam Research CorporationInventors: Stephen M. Sirard, Diane Hymes, Alan M. Schoepp, Ratchana Limary
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Patent number: 8844461Abstract: A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.Type: GrantFiled: April 16, 2007Date of Patent: September 30, 2014Assignee: Lam Research CorporationInventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
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Patent number: 8721908Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.Type: GrantFiled: October 7, 2013Date of Patent: May 13, 2014Assignee: Lam Research CorporationInventors: Andrew D. Bailey, III, Alan M. Schoepp, Gregory Sexton, William S. Kennedy
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Publication number: 20140101964Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.Type: ApplicationFiled: October 11, 2012Publication date: April 17, 2014Applicant: Lam Research CorporationInventors: Stephen M. SIRARD, Diane HYMES, Alan M. SCHOEPP, Ratchana LIMARY
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Publication number: 20140038418Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.Type: ApplicationFiled: October 7, 2013Publication date: February 6, 2014Applicant: Lam Research CorporationInventors: Andrew D. Bailey, III, Alan M. Schoepp, Gregory Sexton, William S. Kennedy
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Patent number: 8580078Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.Type: GrantFiled: January 26, 2007Date of Patent: November 12, 2013Assignee: Lam Research CorporationInventors: Andrew D. Bailey, III, Alan M. Schoepp, Gregory Sexton, William S. Kennedy
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Publication number: 20130280917Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.Type: ApplicationFiled: June 14, 2013Publication date: October 24, 2013Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
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Patent number: 8485120Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.Type: GrantFiled: April 16, 2007Date of Patent: July 16, 2013Assignee: Lam Research CorporationInventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp