Patents by Inventor Alan Morrison

Alan Morrison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150303345
    Abstract: In one embodiment the invention relates to a photodetector device sensitive for wavelengths comprising a doped Ge absorbing material bonded to a substrate material locally of opposite doping polarity and an interface layer formed between the Ge absorbing material and the substrate material to form a p-n junction. In one embodiment the bonded material comprises a p-doped Ge wafer and n-doped Si or So I wafer and obtained from a low-temperature heat treatment after bonding. The invention also discloses a process for making a photodetector.
    Type: Application
    Filed: November 25, 2013
    Publication date: October 22, 2015
    Applicant: University College Cork-National University of Ireland, Cork
    Inventors: Farzan Gity, Brian Corbett, Alan Morrison, John Hayes
  • Patent number: 6270621
    Abstract: A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed.
    Type: Grant
    Filed: June 13, 2000
    Date of Patent: August 7, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Simon W. Tam, Semyon Sherstinsky, Mei Chang, Alan Morrison, Ashok Sinha
  • Patent number: 6123864
    Abstract: A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed.
    Type: Grant
    Filed: October 21, 1994
    Date of Patent: September 26, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Simon W. Tam, Semyon Sherstinsky, Mei Chang, Alan Morrison, Ashok Sinha
  • Patent number: 5882419
    Abstract: An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: March 16, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Ashok Sinha, Mei Chang, Ilya Perlov, Karl Littau, Alan Morrison, Lawrence Chung-Lai Lei
  • Patent number: 5695568
    Abstract: An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
    Type: Grant
    Filed: February 23, 1994
    Date of Patent: December 9, 1997
    Assignee: Applied Materials, Inc.
    Inventors: Ashok Sinha, Mei Chang, Ilya Perlov, Karl Littau, Alan Morrison, Lawrence Chung-Lai Lei