Abstract: Angular accelerometers are described, as are systems employing such accelerometers. The angular accelerometers may include a proof mass and rotational acceleration detection beams directed toward the center of the proof mass. The angular accelerometers may include sensing capabilities for angular acceleration about three orthogonal axes. The sensing regions for angular acceleration about one of the three axes may be positioned radially closer to the center of the proof mass than the sensing regions for angular acceleration about the other two axes. The proof mass may be connected to the substrate though one or more anchors.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

Abstract: The present disclosure provides methods and systems for reducing interference by one or more bubbles in a sensing assembly. Bubble prevention arrangements can use surfaces located in a fluid channel to provide surfaces with higher affinity for bubbles relative to the other surfaces so that the surface retains one or more bubbles within a bubble collection region; and/or to divert at least a portion of any bubbles passing through an opening in the fluid channel. Additionally or alternatively, bubble prevention arrangements comprise an agitation device configured to agitate liquid within the fluid channel. Additionally or alternatively, bubble prevention arrangements are configured to displace one or more bubbles in a region on or adjacent the sensing surface so as to reduce interference of one or more bubbles on the sensing surface.

Abstract: Sensing devices are described. A sensing device includes an inertial sensor, a read-out circuit configured to determine first data indicative of an acceleration of the structure using an output of the inertial sensor, an energy harvester configured to capture energy, and a power management unit. The power management unit comprises a plurality of energy storage components coupled to the energy harvester and a plurality of switches coupled to respective energy storage components of the plurality of energy storage components. The power management unit monitors energy levels stored in the energy storage components, selectively charges the plurality of energy storage components by selectively activating the plurality of switches, and provides power to one or more of the inertial sensor and the read-out circuit based on the monitored energy levels.

Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Angular accelerometers are described, as are systems employing such accelerometers. The angular accelerometers may include a proof mass and rotational acceleration detection beams directed toward the center of the proof mass. The angular accelerometers may include sensing capabilities for angular acceleration about three orthogonal axes. The sensing regions for angular acceleration about one of the three axes may be positioned radially closer to the center of the proof mass than the sensing regions for angular acceleration about the other two axes. The proof mass may be connected to the substrate though one or more anchors.

Abstract: Angular accelerometers are described, as are systems employing such accelerometers. The angular accelerometers may include a proof mass and rotational acceleration detection beams directed toward the center of the proof mass. The angular accelerometers may include sensing capabilities for angular acceleration about three orthogonal axes. The sensing regions for angular acceleration about one of the three axes may be positioned radially closer to the center of the proof mass than the sensing regions for angular acceleration about the other two axes. The proof mass may be connected to the substrate though one or more anchors.

Abstract: Optically isolated micromachined (MEMS) switches and related methods are described. The optically isolated MEMS switches described herein may be used to provide isolation between electronic devices. For example, the optically isolated MEMS switches of the types described herein can enable the use of separate grounds between the receiving electronic device and the control circuitry. Isolation of high-voltage signals and high-voltage power supplies can be achieved by using an optical isolator and a MEMS switch, where the optical isolator controls the state of the MEMS switch. In some embodiments, utilizing optical isolators to provide high voltages, the need for electric high-voltage sources such as high-voltage power supplies and charge pumps may be removed, thus removing the cause of potential damage to the receiving electronic device. In one example, the optical isolator and the MEMS switch may be co-packaged on the same substrate.

Abstract: Optically isolated micromachined (MEMS) switches and related methods are described. The optically isolated MEMS switches described herein may be used to provide isolation between electronic devices. For example, the optically isolated MEMS switches of the types described herein can enable the use of separate grounds between the receiving electronic device and the control circuitry. Isolation of high-voltage signals and high-voltage power supplies can be achieved by using an optical isolator and a MEMS switch, where the optical isolator controls the state of the MEMS switch. In some embodiments, utilizing optical isolators to provide high voltages, the need for electric high-voltage sources such as high-voltage power supplies and charge pumps may be removed, thus removing the cause of potential damage to the receiving electronic device. In one example, the optical isolator and the MEMS switch may be co-packaged on the same substrate.

Abstract: Optically isolated micromachined (MEMS) switches and related methods are described. The optically isolated MEMS switches described herein may be used to provide isolation between electronic devices. For example, the optically isolated MEMS switches of the types described herein can enable the use of separate grounds between the receiving electronic device and the control circuitry. Isolation of high-voltage signals and high-voltage power supplies can be achieved by using an optical isolator and a MEMS switch, where the optical isolator controls the state of the MEMS switch. In some embodiments, utilizing optical isolators to provide high voltages, the need for electric high-voltage sources such as high-voltage power supplies and charge pumps may be removed, thus removing the cause of potential damage to the receiving electronic device. In one example, the optical isolator and the MEMS switch may be co-packaged on the same substrate.

Abstract: Angular accelerometers are described, as are systems employing such accelerometers. The angular accelerometers may include a proof mass and rotational acceleration detection beams directed toward the center of the proof mass. The angular accelerometers may include sensing capabilities for angular acceleration about three orthogonal axes. The sensing regions for angular acceleration about one of the three axes may be positioned radially closer to the center of the proof mass than the sensing regions for angular acceleration about the other two axes. The proof mass may be connected to the substrate though one or more anchors.

Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

Abstract: Optically isolated micromachined (MEMS) switches and related methods are described. The optically isolated MEMS switches described herein may be used to provide isolation between electronic devices. For example, the optically isolated MEMS switches of the types described herein can enable the use of separate grounds between the receiving electronic device and the control circuitry. Isolation of high-voltage signals and high-voltage power supplies can be achieved by using an optical isolator and a MEMS switch, where the optical isolator controls the state of the MEMS switch. In some embodiments, utilizing optical isolators to provide high voltages, the need for electric high-voltage sources such as high-voltage power supplies and charge pumps may be removed, thus removing the cause of potential damage to the receiving electronic device. In one example, the optical isolator and the MEMS switch may be co-packaged on the same substrate.

Abstract: Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer.

Abstract: Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer.