Patents by Inventor Alan P. Constant

Alan P. Constant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • A1MgBand related icosahedral boride semiconducting materials for neutron sensing applications
    Patent number: 7375343
    Abstract: A neutron detecting and method of use for a semiconducting material having a formula of M1M2B14 where M1 is aluminum, magnesium, silver, sodium or scandium and M2 is boron, chromium, erbium, holmium, lithium, magnesium, thulium, titanium, yttrium, or gadolinium.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: May 20, 2008
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Bruce A. Cook, John Evan Snyder, Alan P. Constant, Yun Tian
  • Method of making amorphous silicon on insulator VLSI circuit structures with floating gates
    Patent number: 6017794
    Abstract: An integrated thin film transistor on insulator circuit made up of a number of thin film transistors formed with small feature size and densely packed so as to allow interconnection as a complex circuit. An insulating substrate, preferably flexible, serves as the support layer for the integrated circuit. Control gate metallization is carried on the insulating substrate, a dielectric layer is deposited over the control gate, and an amorphous silicon layer with doped source and drain regions deposited on the dielectric layer. Trenches are formed to remove the amorphous silicon material between transistors to allow highly dense circuit packing. An upper interconnect level which forms connections to the source and drain and gate regions of the thin film transistors, also interconnects the transistors to form more complex circuit structures. Due to the dense packing of the transistors allowed by the trench isolation, the interconnecting foils can be relatively short, increasing the speed of the circuit.
    Type: Grant
    Filed: November 20, 1997
    Date of Patent: January 25, 2000
    Assignee: Iowa State University Research Foundation
    Inventors: Stanley G. Burns, Carl Gruber, Howard R. Shanks, Alan P. Constant, Allen R. Landin, David H. Schmidt
  • Amorphous silicon on insulator VLSI circuit structures
    Patent number: 5742075
    Abstract: An integrated thin film transistor on insulator circuit made up of a number of thin film transistors formed with small feature size and densely packed so as to allow interconnection as a complex circuit. An insulating substrate, preferably flexible, serves as the support layer for the integrated circuit. Control gate metallization is carried on the insulating substrate, a dielectric layer is deposited over the control gate, and an amorphous silicon layer with doped source and drain regions deposited on the dielectric layer. Trenches are formed to remove the amorphous silicon material between transistors to allow highly dense circuit packing. An upper interconnect level which forms connections to the source and drain and gate regions of the thin film transistors, also interconnects the transistors to form more complex circuit structures. Due to the dense packing of the transistors allowed by the trench isolation, the interconnecting foils can be relatively short, increasing the speed of the circuit.
    Type: Grant
    Filed: November 18, 1996
    Date of Patent: April 21, 1998
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Stanley G. Burns, Carl Gruber, Howard R. Shanks, Alan P. Constant, Allen R. Landin, David H. Schmidt