Abstract: Generation of one or more translations is described. The generated translations may be applied to a mask pattern so that the pattern may be moved to cover one or more mask defects in part or in totality.

Abstract: According to one aspect of the invention, a method and apparatus for producing electromagnetic radiation is provided. The apparatus may include a chamber wall enclosing a plasma emission chamber to contain a plasma emission gas. A first electrode may be within the plasma emission chamber. At least one second electrode may within the plasma emission chamber. The at least one second electrode may be rotatable about an axis thereof and positioned within the plasma emission chamber such that when a voltage is applied across the first electrode and the at least one second electrode, a plasma is generated between the first electrode and the at least one second electrode.

Abstract: Inspecting a patterned surface using photoemission of electrons includes selecting materials of the patterned surface, selecting a light source to produce a difference in yield of photoelectrons from the materials, applying the light from the light source to the patterned surface, detecting the emission of photoelectrons from the patterned surface, and inspecting the patterned surface based on the detected photoelectron emissions.

Abstract: Inspecting a patterned surface using photoemission of electrons includes selecting materials of the patterned surface, selecting a light source to produce a difference in yield of photoelectrons from the materials, applying the light from the light source to the patterned surface, detecting the emission of photoelectrons from the patterned surface, and inspecting the patterned surface based on the detected photoelectron emissions.

Abstract: A method of making a photolithographic mask includes detecting a defect in a mask blank. The mask blank includes a reflector on a substrate. The method also includes calculating a correction of an absorber pattern to be used in forming an absorber and forming an absorber on the mask blank using the absorber pattern and the calculated absorber pattern correction. The correction reduces effects of the mask blank defect on the operation of the mask.

Abstract: A method of making a photolithographic mask includes detecting a defect in a mask blank. The mask blank includes a reflector on a substrate. The method also includes calculating a correction of an absorber pattern to be used in forming an absorber and forming an absorber on the mask blank using the absorber pattern and the calculated absorber pattern correction. The correction reduces effects of the mask blank defect on the operation of the mask.

Abstract: A refelective mask having non-reflective and reflective regions. The reflective regions are reflective of light at an inspection wavelength and a semiconductor processing wavelength and the non-reflective regions are substantially non-reflective of light at the inspection wavelength and the semiconductor processing wavelength. The contrast of reflected light off of the non-reflective and reflective regions is greater than 0.210 at either of the two wavelengths.

Abstract: A reflective mask is described having non-reflective and reflective regions, where the reflective regions are reflective of a first light that has an inspection wavelength and are reflective of a second light that has a semiconductor processing exposure wavelength. The non-reflective regions are less reflective of the first light and the second light than the reflective regions in order to create: 1) a first image with a contrast greater than 0.210 and that is formed by reflecting the first light off of the reflective mask; and 2) a second image with a contrast greater than 0.750 and that is formed by reflecting the second light off of the reflective mask.

Abstract: A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Abstract: A reflective mask having non-reflective and reflective regions. The reflective regions are reflective of light at an inspection wavelength and a semiconductor processing wavelength and the non-reflective regions are substantially non-reflective of light at the inspection wavelength and the semiconductor processing wavelength. The contrast of reflected light off of the non-reflective and reflective regions is greater than 0.210 at either of the two wavelengths.