Abstract: A multi-transverse-optical-mode heterojunction diode laser characterized by wavelength control of its output. The wavelength control or the control of multi-transverse-optical-modes may be achieved by, for example, selectively etching a layer to partially remove it and possibly followed by epitaxial regrowth, or by selectively converting a layer to an insulating material of a different refractive index, or by selectively modifying the optical properties of a layer by ion implantation, or by selectively modifying the optical properties of a layer by impurity-induced vacancy disordering.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.

Abstract: A multi-transverse-optical-mode heterojunction diode laser characterized by wavelength control of its output. The wavelength control or the control of multi-transverse-optical-modes may be achieved by, for example, selectively etching a layer to partially remove it and possibly followed by epitaxial regrowth, or by selectively converting a layer to an insulating material of a different refractive index, or by selectively modifying the optical properties of a layer by ion implantation, or by selectively modifying the optical properties of a layer by impurity-induced vacancy disordering.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.