Patents by Inventor Alan Schoepp
Alan Schoepp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210183619Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.Type: ApplicationFiled: July 26, 2019Publication date: June 17, 2021Inventors: Roger Patrick, Neil M.P. Benjamin, Lee Chen, Alan Schoepp, Clint Edward Thomas, Thomas W. Anderson, Sang Heon Song
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Patent number: 10808317Abstract: A deposition apparatus for processing semiconductor substrates having an isothermal processing zone comprises a chemical isolation chamber in which semiconductor substrates are processed. A process gas source is in fluid communication with a showerhead module which delivers process gases from the process gas source to the isothermal processing zone wherein the showerhead module includes a faceplate wherein a lower surface of the faceplate forms an upper wall of a cavity defining the isothermal processing zone, a backing plate, and an isolation ring which surrounds the faceplate and the backing plate. At least one compression seal is compressed between the faceplate and the backing plate which forms a central gas plenum between the faceplate and the backing plate. A substrate pedestal module is configured to heat and support a semiconductor substrate wherein an upper surface of the pedestal module forms a lower wall of the cavity defining the isothermal processing zone within the chemical isolation chamber.Type: GrantFiled: July 3, 2013Date of Patent: October 20, 2020Assignee: Lam Research CorporationInventors: Ramesh Chandrasekharan, Jeremy Tucker, Karl Leeser, Alan Schoepp
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Patent number: 9117860Abstract: A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment.Type: GrantFiled: December 15, 2006Date of Patent: August 25, 2015Assignee: Lam Research CorporationInventors: John Boyd, Yezdi Dordi, Tiruchirapalli Arunagiri, Benjamin W. Mooring, John Parks, William Thie, Fritz C. Redeker, Arthur M. Howald, Alan Schoepp, David Hemker, Carl Woods, Hyungsuk Alexander Yoon, Aleksander Owczarz
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Patent number: 8940098Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.Type: GrantFiled: July 2, 2013Date of Patent: January 27, 2015Assignee: Lam Research CorporationInventors: Greg Sexton, Andrew D. Bailey, III, Alan Schoepp
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Publication number: 20150011096Abstract: A deposition apparatus for processing semiconductor substrates having an isothermal processing zone comprises a chemical isolation chamber in which semiconductor substrates are processed. A process gas source is in fluid communication with a showerhead module which delivers process gases from the process gas source to the isothermal processing zone wherein the showerhead module includes a faceplate wherein a lower surface of the faceplate forms an upper wall of a cavity defining the isothermal processing zone, a backing plate, and an isolation ring which surrounds the faceplate and the backing plate. At least one compression seal is compressed between the faceplate and the backing plate which forms a central gas plenum between the faceplate and the backing plate. A substrate pedestal module is configured to heat and support a semiconductor substrate wherein an upper surface of the pedestal module forms a lower wall of the cavity defining the isothermal processing zone within the chemical isolation chamber.Type: ApplicationFiled: July 3, 2013Publication date: January 8, 2015Inventors: Ramesh Chandrasekharan, Jeremy Tucker, Karl Leeser, Alan Schoepp
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Publication number: 20130276821Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.Type: ApplicationFiled: July 2, 2013Publication date: October 24, 2013Inventors: Greg Sexton, Andrew D. Bailey, III, Alan Schoepp
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Patent number: 7625452Abstract: A method for cleaning a substrate is provided. The method includes providing foam to a surface of the substrate, brush scrubbing the surface of the substrate, providing pressure to the foam, and channeling the pressured foam to produce jammed foam, the channeling including channeling the pressured foam into a gap, the gap being defined by a space between a surface of a brush enclosure and the surface of the substrate. The brush scrubbing of the surface of the substrate and the channeling of the pressured foam across the surface of the substrate facilitate particle removal from the surface of the substrate.Type: GrantFiled: September 14, 2008Date of Patent: December 1, 2009Assignee: Lam Research CorporationInventors: John M. de Larios, Aleksander Owczarz, Alan Schoepp, Fritz Redeker
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Patent number: 7542134Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.Type: GrantFiled: June 2, 2008Date of Patent: June 2, 2009Assignee: Lam Research CorporationInventors: Aleksander Owczarz, Jaroslaw W. Winniczek, Luai Nasser, Alan Schoepp, Fred C. Redeker, Erik Edelberg
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Publication number: 20090000044Abstract: An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.Type: ApplicationFiled: September 14, 2008Publication date: January 1, 2009Inventors: John M. de Larios, Aleksander Owczarz, Alan Schoepp, Fritz Redeker
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Publication number: 20080273195Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.Type: ApplicationFiled: June 2, 2008Publication date: November 6, 2008Inventors: Aleksander Owczarz, Jaroslaw W. Winniczek, Luai Nasser, Alan Schoepp, Fred C. Redeker, Erik Edelberg
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Patent number: 7441299Abstract: An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.Type: GrantFiled: March 31, 2004Date of Patent: October 28, 2008Assignee: Lam Research CorporationInventors: John M. de Larios, Aleksander Owczarz, Alan Schoepp, Fritz Redeker
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Publication number: 20080216864Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.Type: ApplicationFiled: April 6, 2007Publication date: September 11, 2008Inventors: Greg Sexton, Andrew Bailey, Alan Schoepp
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Patent number: 7397555Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.Type: GrantFiled: December 17, 2004Date of Patent: July 8, 2008Assignee: Lam Research CorporationInventors: Aleksander Owczarz, Jaroslaw W. Winniczek, Luai Nasser, Alan Schoepp, Fred C. Redeker, Erik Edelberg
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Publication number: 20080057221Abstract: A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment.Type: ApplicationFiled: December 15, 2006Publication date: March 6, 2008Applicant: Lam Research CorporationInventors: John Boyd, Yezdi Dordi, Tiruchirapalli Arunagiri, Benjamin Mooring, John Parks, William Thie, Fritz Redeker, Arthur Howald, Alan Schoepp, David Hemker
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Publication number: 20080057182Abstract: A method for filling a trench of a substrate in a controlled environment is provided. The method initiates with etching a trench in the substrate in a first chamber of a cluster tool. A barrier layer configured to prevent electromigration is deposited over an exposed surface of the trench in a second chamber of the cluster tool and the trench is filled with a gap fill material deposited directly onto the barrier layer in the cluster tool. A semiconductor device fabricated by the method is also provided.Type: ApplicationFiled: December 15, 2006Publication date: March 6, 2008Inventors: John Boyd, Yezdi Dordi, Tiruchirapalli Arunagiri, Benjamin Mooring, John Parks, William Thie, Fritz Redeker, Arthur Howald, Alan Schoepp, David Hemker
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Publication number: 20060139450Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.Type: ApplicationFiled: December 17, 2004Publication date: June 29, 2006Applicant: Lam Research Corp.Inventors: Aleksander Owczarz, Jaroslaw Winniczek, Luai Nasser, Alan Schoepp, Fred Redeker, Erik Edelberg
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Publication number: 20060011583Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.Type: ApplicationFiled: September 19, 2005Publication date: January 19, 2006Inventors: Andrew Bailey, Alan Schoepp, David Hemker, Mark Wilcoxson
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Publication number: 20050133061Abstract: An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.Type: ApplicationFiled: March 31, 2004Publication date: June 23, 2005Applicant: Lam Research CorporationInventors: John de Larios, Aleksander Owczarz, Alan Schoepp, Fritz Redeker
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Patent number: 6669783Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.Type: GrantFiled: June 28, 2001Date of Patent: December 30, 2003Assignee: Lam Research CorporationInventors: Greg Sexton, Alan Schoepp, Mark Allen Kennard
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Patent number: 6567258Abstract: A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc.Type: GrantFiled: February 15, 2002Date of Patent: May 20, 2003Assignee: Lam Research CorporationInventors: Greg Sexton, Mark Allen Kennard, Alan Schoepp