Patents by Inventor Alan Seabaugh

Alan Seabaugh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single transistor random access memory using ion storage in two-dimensional crystals
    Patent number: 9899480
    Abstract: A single-transistor random access memory (RAM) cell may be used as universal memory. The single-transistor RAM cell generally includes a first gate, a 2D-crystal channel, a source, a drain, an ion conductor, and a second (back) gate. The single-transistor RAM cell is capable of drifting ions towards the graphene channel. The ions in turn induce charge carriers from the source into the graphene channel. The closer the ions are to the graphene channel, the higher the conductivity of the graphene channel. As the ions are spaced from the graphene channel, the conductivity of the graphene channel is reduced. Thus the presence of the charged ions adjacent to the channel is used to modify the channel's conductivity, which is sensed to indicate the state of the memory.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: February 20, 2018
    Assignee: University of Notre Dame du Lac
    Inventors: Alan Seabaugh, Susan Fullerton
  • SINGLE TRANSISTOR RANDOM ACCESS MEMORY USING ION STORAGE IN TWO-DIMENSIONAL CRYSTALS
    Publication number: 20140319452
    Abstract: A single-transistor random access memory (RAM) cell may be used as universal memory. The single-transistor RAM cell generally includes a first gate, a 2D-crystal channel, a source, a drain, an ion conductor, and a second (back) gate. The single-transistor RAM cell is capable of drifting ions towards the graphene channel. The ions in turn induce charge carriers from the source into the graphene channel. The closer the ions are to the graphene channel, the higher the conductivity of the graphene channel. As the ions are spaced from the graphene channel, the conductivity of the graphene channel is reduced. Thus the presence of the charged ions adjacent to the channel is used to modify the channel's conductivity, which is sensed to indicate the state of the memory.
    Type: Application
    Filed: March 14, 2014
    Publication date: October 30, 2014
    Inventors: Alan Seabaugh, Susan Fullerton