Abstract: A formulation for forming a styrene-based scintillator using light-directed additive manufacturing techniques includes a base monomer, a primary dye, a secondary dye, and a cationic photoinitiator. The base monomer includes one or more styrene-derivative monomers.

Abstract: Chemically-modified silicone-based matrices for use in radiation detection. The base matrix is capable of multi-modal particle detection via pulse shape discrimination (PSD), relying in differences in the interaction mechanics between various types of radiation and the matrix itself to produce light with characteristic properties dependent on the incident particle type and energy. The materials, radiation detection devices using the materials, and methods of using the materials as radiation detectors.

Abstract: The present invention relates to a 10B enriched plastic scintillators, methods of making the same and methods of using the same. Neither carboranes nor 3He are required to be included in the plastic scintillators, which can be used in neutron detection.

Abstract: An aspect of the present disclosure is a nanocrystal that includes a nanocrystal core and a ligand coordinated to a surface of the nanocrystal core, where the ligand includes a functionalized aromatic molecule. In some embodiments of the present disclosure, the functionalized aromatic molecule may include at least one of cinnamic acid (CAH) and/or a functionalized CAH molecule.

Abstract: An aspect of the present disclosure is a device that includes a first layer that includes a hole-transport material and an acid, where the first layer has a conductivity between 20 ?S/cm and 500 ?S/cm. In some embodiments of the present disclosure, the first layer may absorb light having a wavelength between 400 nm and 600 nm. In some embodiments of the present disclosure, the hole-transport material may include at least one of 2,2?,7,7?-tetrakis(N,N-di-p-methoxyphenylamine)-9,9?-spirobifluorene (spiro-OMeTAD), a derivative of spiro-OMeTAD, poly(triarylamine), poly(3-hexylthiophene), and/or N,N?-bis(3-methylphenyl)-N,N?-diphenylbenzidine.

Abstract: The present invention relates to a 10B enriched plastic scintillators, methods of making the same and methods of using the same. Neither carboranes nor 3He are required to be included in the plastic scintillators, which can be used in neutron detection.

Abstract: The present invention is directed to systems and methods for producing an improved pulse shape discriminating (PSD) scintillator by including a cross-linking agent, such as BPA-DM, in the polymer from which the scintillator is machined, and to PSD scintillators produced thereby. The cross-linking agent could also be used for plastic scintillators with significant incorporation of specialized dopants (boron, lead or bismuth) for thermal neutron, fast neutron and/or gamma radiation detection.

Abstract: The present invention is directed to systems and methods for producing an improved PSD scintillator by including a cross-linking agent, such as BPA-DM, in the polymer from which the scintillator is machined, and to PSD scintillators produced thereby. The cross-linking agent could also be used for plastic scintillators with significant incorporation of specialized dopants (boron, lead or bismuth) for thermal neutron or gamma radiation detection.

Abstract: The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent.

Abstract: The invention is directed to a method for making a boron containing compound, a method for making a plastic scintillator and a method for forming a neutron detecting material, and the materials made therein. Methods of use are also disclosed.

Abstract: An aspect of the present disclosure is a device that includes a first layer that includes a hole-transport material and an acid, where the first layer has a conductivity between 20 ?S/cm and 500 ?S/cm. In some embodiments of the present disclosure, the first layer may absorb light having a wavelength between 400 nm and 600 nm. In some embodiments of the present disclosure, the hole-transport material may include at least one of 2,2?,7,7?-tetrakis(N,N-di-p-methoxyphenylamine)-9,9?-spirobifluorene (spiro-OMeTAD), a derivative of spiro-OMeTAD, poly(triarylamine), poly(3-hexylthiophene), and/or N,N?-bis(3-methylphenyl)-N,N?-diphenylbenzidine.

Abstract: An aspect of the present disclosure is a nanocrystal that includes a nanocrystal core and a ligand coordinated to a surface of the nanocrystal core, where the ligand includes a functionalized aromatic molecule. In some embodiments of the present disclosure, the functionalized aromatic molecule may include at least one of cinnamic acid (CAH) and/or a functionalized CAH molecule.

Abstract: The present invention relates to semiconductor materials that include a silicon-based quantum dot; and a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot. An additional aspect of the present invention is to provide methods that include providing a silicon-based quantum dot; and connecting a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot.

Abstract: The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent.

Abstract: The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidised salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidised salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent.

Abstract: The invention is directed to a method for making a boron containing compound, a method for making a plastic scintillator and a method for forming a neutron detecting material, and the materials made therein. Methods of use are also disclosed.

Abstract: The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidised salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidised salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent.

Abstract: Improved electron acceptor materials for organic photovoltaic (OPV) cells are provided. More specifically, electron acceptor materials for OPVs can include vinylimide, vinylthioimide, alkynylimide and/or alkynylthioimide moieties. Experimental work with members of this class of material has demonstrated record solar cell power conversion efficiency (3.36%) for non-fullerene acceptors.

Abstract: The present invention relates to semiconductor materials that include a silicon-based quantum dot; and a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot. An additional aspect of the present invention is to provide methods that include providing a silicon-based quantum dot; and connecting a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot.

Abstract: Improved electron acceptor materials for organic photovoltaic (OPV) cells are provided. More specifically, electron acceptor materials for OPVs can include vinylimide, vinylthioimide, alkynylimide and/or alkynylthioimide moieties. Experimental work with members of this class of material has demonstrated record solar cell power conversion efficiency (3.36%) for non-fullerene acceptors.