Patents by Inventor Alan SPOOL

Alan SPOOL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitrogen Doped Oxides for Lower Bandgap
    Publication number: 20250226140
    Abstract: Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.
    Type: Application
    Filed: January 9, 2024
    Publication date: July 10, 2025
    Applicant: Western Digital Technologies, Inc.
    Inventors: Quang LE, Brian R. YORK, Andrew CHEN, Jinming LIU, Alan SPOOL, Son T. LE, Xiaoyong LIU, Michael A. GRIBELYUK, Hisashi TAKANO, Xing-Cai GUO
  • Bismuth antimony alloys for use as topological insulators
    Patent number: 11495741
    Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: November 8, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Brian R. York, Cherngye Hwang, Alan Spool, Michael Gribelyuk, Quang Le
  • Bismuth Antimony Alloys for Use as Topological Insulators
    Publication number: 20210408370
    Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 30, 2021
    Inventors: Brian R. YORK, Cherngye HWANG, Alan SPOOL, Michael GRIBELYUK, Quang LE