Patents by Inventor Alan Tu

Alan Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12347997
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Grant
    Filed: April 26, 2024
    Date of Patent: July 1, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20240297476
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Application
    Filed: April 26, 2024
    Publication date: September 5, 2024
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11973302
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Grant
    Filed: February 20, 2023
    Date of Patent: April 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11728170
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: August 15, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hong-Ying Lin, Cheng-Yi Wu, Alan Tu, Chung-Liang Cheng, Li-Hsuan Chu, Ethan Hsiao, Hui-Lin Sung, Sz-Yuan Hung, Sheng-Yung Lo, C. W. Chiu, Chih-Wei Hsieh, Chin-Szu Lee
  • Publication number: 20230208092
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Application
    Filed: February 20, 2023
    Publication date: June 29, 2023
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11588293
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: February 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee-Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20210335616
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Application
    Filed: July 8, 2021
    Publication date: October 28, 2021
    Inventors: Hong-Ying LIN, Cheng-Yi WU, Alan TU, Chung-Liang CHENG, Li-Hsuan CHU, Ethan HSIAO, Hui-Lin SUNG, Sz-Yuan HUNG, Sheng-Yung LO, C.W. CHIU, Chih-Wei HSIEH, Chin-Szu LEE
  • Patent number: 11062908
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hong-Ying Lin, Cheng-Yi Wu, Alan Tu, Chung-Liang Cheng, Li-Hsuan Chu, Ethan Hsiao, Hui-Lin Sung, Sz-Yuan Hung, Sheng-Yung Lo, C. W. Chiu, Chih-Wei Hsieh, Chin-Szu Lee
  • Patent number: 10763116
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hong-Ying Lin, Cheng-Yi Wu, Alan Tu, Chung-Liang Cheng, Li-Hsuan Chu, Ethan Hsiao, Hui-Lin Sung, Sz-Yuan Hung, Sheng-Yung Lo, C. W. Chiu, Chih-Wei Hsieh, Chin-Szu Lee
  • Patent number: 10574638
    Abstract: A user may desire to execute a process in a target environment. However, administrators may want control over processes that haven't been preapproved to prevent the execution of processes that may affect security and compliance within the environment. Implementation of a multi-factor execution gateway may grant the user limited access to execute the process himself at an otherwise restricted, protected, or decoupled environment, while ensuring security and compliance by obtaining approval from the appropriate authorities. For example, a request to execute the process in the environment may be detected, and a fingerprint may be generated based on parameters of the request. A signature for the fingerprint in the form of private key(s) acquired from authorizer(s) based on a level of authorization required for the process may be received to generate a key, and execution of the process may then be allowed at the environment using the key.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: February 25, 2020
    Assignee: Microsoft Technology Licensing, LLC
    Inventor: Alan Tus
  • Publication number: 20200043739
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Application
    Filed: October 8, 2019
    Publication date: February 6, 2020
    Inventors: Hong-Ying LIN, Cheng-Yi WU, Alan TU, Chung-Liang CHENG, Li-Hsuan CHU, Ethan HSIAO, Hui-Lin SUNG, Sz-Yuan HUNG, Sheng-Yung LO, C.W. CHIU, Chih-Wei Hsieh, Chin-Szu LEE
  • Patent number: 10394916
    Abstract: Technologies are described to provide a personalized search environment to users without requiring enterprise environment access. Upon access of a personal service account such as one in a productivity service, a user's personal environment may be created by an aggregation service using graph based data infrastructure. Sources of information may include personal email accounts, calendars, social/professional networks, task list applications, online data storage services, health applications, gaming applications, and communication applications associated with the user. A personalized search application may then use the data from the aggregation service and/or (if available) user's enterprise account information to perform personalized searches with relevant results for the user.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: August 27, 2019
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Alan Tus, Konstantin Seleskerov, Panos Sakkos, Rovin Bhandari
  • Patent number: 10305874
    Abstract: A user may desire to execute a process in a target environment. However, administrators may want control over processes that haven't been preapproved to prevent the execution of processes that may affect security and compliance within the environment. Implementation of a multi-factor execution gateway may grant the user limited access to execute the process himself at an otherwise restricted, protected, or decoupled environment, while ensuring security and compliance by obtaining approval from the appropriate authorities. For example, a request to execute the process in the environment may be detected, and a fingerprint may be generated based on parameters of the request. A signature for the fingerprint in the form of private key(s) acquired from authorizer(s) based on a level of authorization required for the process may be received to generate a key, and execution of the process may then be allowed at the environment using the key.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: May 28, 2019
    Assignee: Microsoft Technology Licensing, LLC
    Inventor: Alan Tus
  • Publication number: 20190157828
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Application
    Filed: October 19, 2018
    Publication date: May 23, 2019
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee-Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20190131134
    Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 2, 2019
    Inventors: Hong-Ying LIN, Cheng-Yi Wu, Alan Tu, Chung-Liang Cheng, Li-Hsuan Chu, Ethan Hsiao, Hui-Lin Sung, Sz-Yuan Hung, Sean Lo, C.W. Chiu, Chih-Wei Hsieh, Chin-Szu Lee
  • Publication number: 20180075148
    Abstract: Technologies are described to provide a personalized search environment to users without requiring enterprise environment access. Upon access of a personal service account such as one in a productivity service, a user's personal environment may be created by an aggregation service using graph based data infrastructure. Sources of information may include personal email accounts, calendars, social/professional networks, task list applications, online data storage services, health applications, gaming applications, and communication applications associated with the user. A personalized search application may then use the data from the aggregation service and/or (if available) user's enterprise account information to perform personalized searches with relevant results for the user.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 15, 2018
    Applicant: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Alan Tus, Konstantin Seleskerov, Panos Sakkos, Rovin Bhandari