Patents by Inventor Alan Young Liu

Alan Young Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integration of direct-bandgap optically active devices on indirect-bandgap-based substrates
    Patent number: 10761266
    Abstract: A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate (108) is disclosed. The structure of the active optical device includes an active region (120) having quantum dots (206) made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantum dot material in order to suppress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: September 1, 2020
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Alan Young Liu, Justin Norman, Arthur Gossard, John Bowers
  • UNIPOLAR LIGHT DEVICES INTEGRATED WITH FOREIGN SUBSTRATES AND METHODS OF FABRICATION
    Publication number: 20200185885
    Abstract: A light emitting device includes a unipolar light emitter structured from materials arranged to provide light emission via intersubband transitions of a single type of carrier in either of the conduction band or valence band integrated with a foreign surface.
    Type: Application
    Filed: May 18, 2018
    Publication date: June 11, 2020
    Inventors: Alan Young Liu, Alexander Spott, Arthur Gossard, John Bowers
  • INTEGRATION OF DIRECT-BANDGAP OPTICALLY ACTIVE DEVICES ON INDIRECT-BANDGAP-BASED SUBSTRATES
    Publication number: 20190129097
    Abstract: A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate (108) is disclosed. The structure of the active optical device includes an active region (120) having quantum dots (206) made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantom dot material in order to supress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device.
    Type: Application
    Filed: May 31, 2017
    Publication date: May 2, 2019
    Inventors: Alan Young Liu, Justin Norman, Arthur Gossard, John Bowers