Abstract: This disclosure provides systems, methods, and apparatus related to the high temperature mechanical testing of materials. In one aspect, a method includes providing an apparatus. The apparatus may include a chamber. The chamber may comprise a top portion and a bottom portion, with the top portion and the bottom portion each joined to a window material. A first cooled fixture and a second cooled fixture may be mounted to the chamber and configured to hold the sample in the chamber. A plurality of heating lamps may be mounted to the chamber and positioned to heat the sample. The sample may be placed in the first and the second cooled fixtures. The sample may be heated to a specific temperature using the heating lamps. Radiation may be directed though the window material, the radiation thereafter interacting with the sample and exiting the chamber through the window material.

Abstract: This disclosure provides systems, methods, and apparatus related to the high temperature mechanical testing of materials. In one aspect, a method includes providing an apparatus. The apparatus may include a chamber. The chamber may comprise a top portion and a bottom portion, with the top portion and the bottom portion each joined to a window material. A first cooled fixture and a second cooled fixture may be mounted to the chamber and configured to hold the sample in the chamber. A plurality of heating lamps may be mounted to the chamber and positioned to heat the sample. The sample may be placed in the first and the second cooled fixtures. The sample may be heated to a specific temperature using the heating lamps. Radiation may be directed though the window material, the radiation thereafter interacting with the sample and exiting the chamber through the window material.

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract: Devices built to design rules .ltoreq.0.25 .mu.m are pattern delineated by use of synchrotron-emitted x-ray radiation using a condenser which collects over a collection arc of at least 100 mrad. Condenser designs provide for processing of collected radiation to tailor characteristics such as direction and divergence. Pattern delineation by proximity printing as well as by projection printing is described. Forms of projection printing include reduction ringfield projection as by 5:1 mask:image reduction.