Abstract: A method for simultaneously slicing a multiplicity of wafers from a substantially circular-cylindrical workpiece that is connected to a sawing strip includes executing a relative movement between the workpiece and a wire gang of a wire saw with the aid of a forward feed device with a defined forward feed rate so as to slice the wafers. The forward feed rate is varied through the course of the method and includes being set to a value v1 at a cutting depth of 50% of the workpiece diameter. Subsequently, the forward feed rate is to a value v2>1.15×v1 as the forward feed rate passes through a local maximum. The forward feed rate is set to a value v3<v1 when the wire gang first comes into contact with the sawing strip. The forward feed rate is increased to a value v5>v3.

Abstract: A method for slicing a plurality of wafers from a crystal includes providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge. The crystal is fixed on a table and guided through a wire gang defined by sawing wire so as to form the wafers. The guiding is provided by a relative movement between the table and the wire gang such that entry sawing or exit sawing using the sawing wire occurs in a vicinity of the at least one pulling edge of the crystal.

Abstract: A method for simultaneously slicing a multiplicity of wafers from a substantially circular-cylindrical workpiece that is connected to a sawing strip includes executing a relative movement between the workpiece and a wire gang of a wire saw with the aid of a forward feed device with a defined forward feed rate so as to slice the wafers. The forward feed rate is varied through the course of the method and includes being set to a value v1 at a cutting depth of 50% of the workpiece diameter. Subsequently, the forward feed rate is to a value v2>1.15×v1 as the forward feed rate passes through a local maximum. The forward feed rate is set to a value v3<v1 when the wire gang first comes into contact with the sawing strip. The forward feed rate is increased to a value v5>v3.

Abstract: A method for slicing a plurality of wafers from a crystal includes providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge. The crystal is fixed on a table and guided through a wire gang defined by sawing wire so as to form the wafers. The guiding is provided by a relative movement between the table and the wire gang such that entry sawing or exit sawing using the sawing wire occurs in a vicinity of the at least one pulling edge of the crystal.