Patents by Inventor Albert Burk

Albert Burk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stable power devices on low-angle off-cut silicon carbide crystals
    Patent number: 8536582
    Abstract: A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of less than 8°.
    Type: Grant
    Filed: November 20, 2009
    Date of Patent: September 17, 2013
    Assignee: Cree, Inc.
    Inventors: Qingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Burk, Joseph Sumakeris, Michael O'Loughlin
  • STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS
    Publication number: 20100133550
    Abstract: A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of less than 8°.
    Type: Application
    Filed: November 20, 2009
    Publication date: June 3, 2010
    Inventors: Qingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Burk, Joseph Sumakeris, Michael O'Loughlin
  • Minimizing Degradation of SiC Bipolar Semiconductor Devices
    Publication number: 20070117336
    Abstract: A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.
    Type: Application
    Filed: November 16, 2006
    Publication date: May 24, 2007
    Applicant: Cree, Inc.
    Inventors: Joseph Sumakeris, Ranbir Singh, Michael Paisley, Stephan Mueller, Hudson Hobgood, Calvin Carter, Albert Burk
  • Minimizing degradation of SiC bipolar semiconductor devices
    Publication number: 20050116234
    Abstract: A bipolar device has at least one p?type layer of single crystal silicon carbide and at least one n?type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
    Type: Application
    Filed: December 22, 2004
    Publication date: June 2, 2005
    Inventors: Joseph Sumakeris, Ranbir Singh, Michael Paisley, Stephan Mueller, Hudson Hobgood, Calvin Carter, Albert Burk
  • Minimizing degradation of SiC bipolar semiconductor devices
    Publication number: 20050118746
    Abstract: A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.
    Type: Application
    Filed: December 22, 2004
    Publication date: June 2, 2005
    Inventors: Joseph Sumakeris, Ranbir Singh, Michael Paisley, Stephan Mueller, Hudson Hobgood, Calvin Carter, Albert Burk