Patents by Inventor Albert D. Liao

Albert D. Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Adaptive resistive device and methods thereof
    Patent number: 9324422
    Abstract: A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: April 26, 2016
    Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Eric Pop, Feng Xiong, Albert D. Liao
  • ADAPTIVE RESISTIVE DEVICE AND METHODS THEREOF
    Publication number: 20160111149
    Abstract: A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.
    Type: Application
    Filed: April 18, 2012
    Publication date: April 21, 2016
    Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Eric Pop, Feng Xiong, Albert D. Liao
  • ADAPTIVE RESISTIVE DEVICE AND METHODS THEREOF
    Publication number: 20130279245
    Abstract: A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 24, 2013
    Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Eric Pop, Feng Xiong, Albert D. Liao