Patents by Inventor Albert E. Ozias
Albert E. Ozias has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 5902407Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.Type: GrantFiled: August 10, 1995Date of Patent: May 11, 1999Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5657150Abstract: An electrochromic device for use in the field of optical lenses. The device includes a substrate having an expanse and an edge region. A first electrode layer is coated on the expanse and extends substantially across the expanse and into the edge region. An electrochromic layer is coated on the first electrode so that the first electrode layer physically isolates the electrochromic layer from the substrate. A second electrode layer is coated on the electrochromic layer, so that the electrochromic layer physically isolates the second electrode layer from the first electrode layer. A first contact is electrically connected to the first electrode layer. An isolative barrier is coated on the first electrode layer in the edge region. A second contact is electrically connected to the second electrode layer. Alternatively, an isolative channel is formed in the second electrode layer to electrically isolate the first electrode layer from the second electrode layer.Type: GrantFiled: January 13, 1994Date of Patent: August 12, 1997Assignee: Eyeonics CorporationInventors: William R. Kallman, James D. Williams, Albert E. Ozias, Leonard M. Dorfman, Christian F. Schaus, Geoffrey A. Russell, Scott G. Wills, David G. Keeney
-
Patent number: 5435682Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.Type: GrantFiled: June 7, 1994Date of Patent: July 25, 1995Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Richard Crabb, McDonald Robinson, Mark R. Hawkins, Dennis L. Goodwin, Armand P. Ferro, Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5427620Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.Type: GrantFiled: May 13, 1992Date of Patent: June 27, 1995Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5374315Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.Type: GrantFiled: October 7, 1993Date of Patent: December 20, 1994Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5318634Abstract: A rotatable shaft supports and imparts rotary motion to a susceptor supporting spider to locate the susceptor and any substrate mounted thereon within a reaction chamber during a CVD process. The spider includes a plurality of radially extending arms having upwardly directed pegs for engaging cavities in the underside of the susceptor and a hub for interconnection with the rotatable shaft.Type: GrantFiled: February 14, 1991Date of Patent: June 7, 1994Assignee: Epsilon Technology, Inc.Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5261960Abstract: An improved reaction chamber for use in an epitaxial deposition process or processing a single wafer-at-a-time. The reaction chamber includes a cold-wall reactor having a substantially rectangular cross-section. The cross-sectional area of the reactant chamber is substantially reduced to increase the efficiency of the system. Wall deposits are restricted to those which can be readily gas-etched array at various stages of the deposition process by the use of a cooling chamber or plenum about at least the downstream portion of the reactor. Apparatus is provided to maintain the wall temperature within a predetermined range for insuring that only readily cleanable deposits are formed. The reduced cross-sectional area results in insufficient room to mount a susceptor. Therefore, the susceptor assembly is mounted within a well distending vertically downward from the bottom of the chamber or within a second portion of a duel height chamber having a greater cross-sectional area.Type: GrantFiled: May 14, 1992Date of Patent: November 16, 1993Assignee: Epsilon Technology, Inc.Inventor: Albert E. Ozias
-
Patent number: 5244694Abstract: Apparatus for carrying out an epitaxial deposition process upon a single wafer disposed in a reaction chamber. The chamber has a substantially rectangular cross section reduced in area for increased system efficiency. A susceptor may be mounted in a well or in a downstream portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable reactant gas deposits beneath the susceptor. The velocity profile and flow of reactant gas beneath the susceptor are controlled by a shaped transversely extending gap between the susceptor and the upstream portion of the chamber.Type: GrantFiled: May 3, 1991Date of Patent: September 14, 1993Assignee: Advanced Semiconductor Materials America, Inc.Inventor: Albert E. Ozias
-
Patent number: 5198034Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.Type: GrantFiled: March 4, 1991Date of Patent: March 30, 1993Assignee: Epsilon Technology, Inc.Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5117769Abstract: A hollow drive shaft mounted within a tubular shaft depending from a reaction chamber supports a substrate receiving susceptor to effect rotation of the susceptor.Type: GrantFiled: June 15, 1990Date of Patent: June 2, 1992Assignee: Epsilon Technology, Inc.Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5096534Abstract: An epitaxial deposition method for processing a single wafer and a reaction chamber for conducting the method. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber. Two types of reactant gas injectors can be used for controlling the velocity profile of injected gases.Type: GrantFiled: March 28, 1989Date of Patent: March 17, 1992Assignee: Epsilon Technology, Inc.Inventor: Albert E. Ozias
-
Patent number: 5092728Abstract: Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.Type: GrantFiled: February 24, 1989Date of Patent: March 3, 1992Assignee: Epsilon Technology, Inc.Inventors: Richard Crabb, McDonald Robinson, Mark R. Hawkins, Dennis L. Goodwin, Armand P. Ferro, Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 5044315Abstract: Apparatus for processing a single wafer and a reaction chamber for conducting an epitaxial deposition process therein. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber.Type: GrantFiled: January 23, 1990Date of Patent: September 3, 1991Assignee: Epsilon Technology, Inc.Inventor: Albert E. Ozias
-
Patent number: 4996942Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.Type: GrantFiled: March 29, 1989Date of Patent: March 5, 1991Assignee: Epsilon Technology, Inc.Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 4993355Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.Type: GrantFiled: April 17, 1989Date of Patent: February 19, 1991Assignee: Epsilon Technology, Inc.Inventors: Wiebe B. deBoer, Albert E. Ozias
-
Patent number: 4975561Abstract: A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in horizontal flow for depositing materials on a substrate which is supported in a reaction chamber on a susceptor which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly, a lower heating element assembly and a heat concentrator mechanism whic interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processing cycle.Type: GrantFiled: March 3, 1989Date of Patent: December 4, 1990Assignee: Epsilon Technology Inc.Inventors: McDonald Robinson, Albert E. Ozias
-
Patent number: 4846102Abstract: An improved reaction chamber for use in an epitaxial deposition process for processing a single wafer-at-a-time includes a cold-wall reactor having a substantially rectangular cross-section. The cross-sectional area of the reaction chamber is substantially reduced to increase the efficiency of the system. Apparatus is provided to maintain the wall temperature within a predetermined range for insuring that only readily cleanable deposits are formed. The susceptor assembly is mounted within a wall distending vertically downward from the bottom of the chamber or within a second portion of a duel height chamber having a greater cross-sectional area. A method and apparatus is provided for supplying purge gas to prevent the flow of reactant gas and the undesirable deposits resulting therefrom from forming beneath the susceptor.Type: GrantFiled: June 24, 1987Date of Patent: July 11, 1989Assignee: Epsilon Technology, Inc.Inventor: Albert E. Ozias
-
Patent number: 4836138Abstract: A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber on a susceptor which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly, a lower heating element assembly and a heat concentrator mechanism which interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processig cycle.Type: GrantFiled: June 18, 1987Date of Patent: June 6, 1989Assignee: Epsilon Technology, Inc.Inventors: McDonald Robinson, Albert E. Ozias
-
Patent number: 4828224Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.Type: GrantFiled: October 15, 1987Date of Patent: May 9, 1989Assignee: Epsilon Technology, Inc.Inventors: Richard Crabb, McDonald Robinson, Mark R. Hawkins, Dennis L. Goodwin, Armand P. Ferro, Albert E. Ozias, Wiebe B. deBoer
-
Patent number: 4821674Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.Type: GrantFiled: March 31, 1987Date of Patent: April 18, 1989Inventors: Wiebe B. deBoer, Albert E. Ozias