Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: An integrated power amplifier circuit is disclosed. The circuit comprises: first and second amplifiers fabricated on one or more dies, the one or more dies being mounted on a support structure; a first set of one or more connection elements connected to the first amplifier and passing above a portion of the support structure; and a second set of one or more connection elements connected to the second amplifier and passing above a portion of the support structure. The support structure comprises at least one void, at least a portion of the at least one void being positioned directly underneath at least one of the first and second sets of one or more connection elements.

Abstract: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.

Abstract: The disclosure relates to an amplifier device comprising an integrated circuit die (701a; 701b) having a first amplifier (702a; 702b) and a second amplifier. A Doherty amplifier may be implemented in accordance with the present invention. The amplifier device also comprises a first connector (706a; 706b) having a first end coupled to the first amplifier and a second end for coupling with a circuit board (718a; 718b), a second connector (708a; 708b) having a first end coupled to the second amplifier (704a; 704b) and a second end for coupling with a circuit board (718a; 718b), a shielding member (710a; 710b) having a first end coupled to the integrated circuit die (701a; 701b) and a second end for coupling with a circuit board (718a; 718b), the shielding member (710a; 710b) situated at least partially between the second connector and the first connector (706a; 706b) and a capacitor. The capacitor has a first plate and a second plate.

Abstract: The disclosure relates to an amplifier device comprising an integrated circuit die (701a; 701b) having a first amplifier (702a; 702b) and a second amplifier. A Doherty amplifier may be implemented in accordance with the present invention. The amplifier device also comprises a first connector (706a; 706b) having a first end coupled to the first amplifier and a second end for coupling with a circuit board (718a; 718b), a second connector (708a; 708b) having a first end coupled to the second amplifier (704a; 704b) and a second end for coupling with a circuit board (718a; 718b), a shielding member (710a; 710b) having a first end coupled to the integrated circuit die (701a; 701b) and a second end for coupling with a circuit board (718a; 718b), the shielding member (710a; 710b) situated at least partially between the second connector and the first connector (706a; 706b) and a capacitor. The capacitor has a first plate and a second plate.

Abstract: An integrated power amplifier circuit is disclosed. The circuit comprises: first and second amplifiers fabricated on one or more dies, the one or more dies being mounted on a support structure; a first set of one or more connection elements connected to the first amplifier and passing above a portion of the support structure; and a second set of one or more connection elements connected to the second amplifier and passing above a portion of the support structure. The support structure comprises at least one void, at least a portion of the at least one void being positioned directly underneath at least one of the first and second sets of one or more connection elements.