Patents by Inventor Albert Hammerschmidt

Albert Hammerschmidt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5486447
    Abstract: Cost-effective, negative resists having high thermal stability based on oligomeric and/or polymeric polybenzoxazole precursors are disclosed. Also disclosed are resist solutions having a high level of storage stability when they contain a photoactive component in the form of a bisazide and when the polybenzoxazole precursors are hydroxypolyamides having the following structure: ##STR1## where R, R*, R.sub.1, R.sub.1 * and R.sub.2 are aromatic groups, R.sub.3 is an aromatic group or a norbornene residue, and wherein n.sub.1, n.sub.2 and n.sub.3, are defined as follows:n.sub.1 =1 to 100, n.sub.2 and n.sub.3 =0 orn.sub.1 and n.sub.2 =1 to 100, n.sub.3 =0 orn.sub.2 =1 to 100, n.sub.1 and n.sub.3 =0 orn.sub.1, n.sub.2 and n.sub.3 =1 to 100 (with R.noteq.R* or R.sub.1 .noteq.R.sub.1 * or both) orn.sub.1 and n.sub.3 =1 to 100, n.sub.2 =0 (with R.noteq.R* or R.sub.1 .noteq.R.sub.1 * or both),on the condition that: n.sub.1 +n.sub.2 +n.sub.3 .gtoreq.3.
    Type: Grant
    Filed: October 27, 1994
    Date of Patent: January 23, 1996
    Assignee: Siemens Aktiengesellschaft
    Inventors: Albert Hammerschmidt, Eberhard Kuhn, Erwin Schmidt
  • Patent number: 5427985
    Abstract: Amorphous, hydrogenated carbon (a-C:H) having a low interfacial state density is obtained when a-C:H layers that had been produced on a semiconductor substrate through plasma deposition are subjected to a hydrogen treatment at an increased pressure and increased temperature.
    Type: Grant
    Filed: March 9, 1994
    Date of Patent: June 27, 1995
    Assignee: Siemens Aktiengesellschaft
    Inventors: Albert Hammerschmidt, Thomas Mandel
  • Patent number: 5376499
    Abstract: Cost-effective, highly heat-resistant positive resists based on oligomer and/or polymer polybenzoxazole precursors and diazo quinones possess a high [level of] stability in storage when the polybenzoxazole precursors are hydroxypolyamides of the following structure: ##STR1## whereby R, R*, R.sub.1, R*.sub.1, and R.sub.2 are aromatic groups, R.sub.3 is an aliphatic, cycloaliphatic or aromatic group having at least one alkenyl or alkynyl grouping and, with respect to n.sub.1, n.sub.2 and n.sub.3, the following applies:n.sub.1 =1 to 100, n.sub.3 and n.sub.3 =0 orn.sub.1 and n.sub.2 =1 to 100, n.sub.3 =0 orn.sub.2 =1 to 100, n.sub.1 and n.sub.3 =0 orn.sub.1, n.sub.2 and n.sub.3 =1 to 100 (whereby R.noteq.R* and/or R.noteq.R*.sub.1) orn.sub.1 and n.sub.3 =1 to 100, n.sub.2 =0 (whereby R.noteq.R* and/or R.sub.1 .noteq.R*.sub.1) ,provided that: n.sub.1 +n.sub.2 +n.sub.3 >3.
    Type: Grant
    Filed: May 7, 1992
    Date of Patent: December 27, 1994
    Assignee: Siemens Aktiengesellschaft
    Inventors: Albert Hammerschmidt, Siegfried Birkle, Hellmut Ahne
  • Patent number: 5147961
    Abstract: Hydroxypolyamides can be obtained in a simple and economical way in a chloride-free manner when(a) aromatic amino hydroxy carboxylic acids or(b) aromatic diaminodihydroxy compounds and aromatic dicarboxylic acids or(c) aromatic diaminodihydroxy compounds, aromatic dicarboxylic acids and aromatic amino hydroxy carboxylic acids are converted in the presence of 1-ethoxycarbonyl-2-ethoxy-1.2-dihydroquinoline, 1.1'-carbonyldioxy-di-1.2.3-benzotriazole or dicyclohexyl carbodiimide/1-hydroxy-1.2.3-benzotriazole.
    Type: Grant
    Filed: October 9, 1991
    Date of Patent: September 15, 1992
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Peter Baeuerlein, Albert Hammerschmidt
  • Patent number: 5104773
    Abstract: Highly thermoresistant relief structures can be produced simply and cost-effectively from polybenzoxazole precursors which do not have any polymerizable groups, respectively without any photoactive components being present, when soluble hydroxypolyamides are applied in the form of a layer or film on a substrate and are irradiated through a mask by means of an UV-excimer laser with a power density >10.sup.5 W/cm.sup.2 per pulse, and are developed with an aqueous-alkaline developing agent and subsequently tempered.
    Type: Grant
    Filed: March 29, 1990
    Date of Patent: April 14, 1992
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Albert Hammerschmidt, Erwin Schmidt
  • Patent number: 5096999
    Abstract: Hydroxypolyamides can be obtained in a simple and economical way in a chloride-free manner when(a) aromatic amino hydroxy carboxylic acids or(b) aromatic diaminodihydroxy compounds and aromatic dicarboxylic acids or(c) aromatic diaminodihydroxy compounds, aromatic dicarboxylic acids and aromatic amino hydroxy carboxylic acids are converted in the presence of 1-ethoxycarbonyl-2-ethoxy-1.2-dihydroquinoline, 1-1'-carbonyldioxy-di-1.2.3-benzotriazole or dicyclohexyl carbodiimide/1-hydroxy-1.2.3-benzotriazole.
    Type: Grant
    Filed: March 29, 1990
    Date of Patent: March 17, 1992
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ahne Hellmut, Peter Baeuerlein, Albert Hammerschmidt
  • Patent number: 5081000
    Abstract: The invention provides photosensitive mixtures consisting of a polymer and a photoactive component which meet the requirements placed on photoresists. The polymer has carboxylic acid anhydride groups or phenolic hydroxyl groups and the photoactive component is an N-alkylated or N-arylated 1.4-dihydropyridine or a 1.4- dihydropyridine derivative of the following structure: ##STR1## where the R group is a (substituted) aryl group, which, in the ortho position to the bond with the dihydropyridine ring, carries a NO.sub.2 group; and R.sup.3 is alkyl, cyclohexyl or phenyl.
    Type: Grant
    Filed: March 16, 1990
    Date of Patent: January 14, 1992
    Assignee: Siemens Aktiengesellschaft
    Inventors: Eberhard Kuehn, Albert Hammerschmidt, Erwin Schmidt, Hellmut Ahne
  • Patent number: 5040090
    Abstract: A capacitive moisture sensor with a dielectric consisting of a moisture sensitive polymer which is mounted between two electrodes fulfills all the requirements of capacitive moisture sensors to a high degree, in particular with regard to a high long-term stability, when the organic polymer is a polybenzoxazole or a polybenzothiazole.
    Type: Grant
    Filed: April 26, 1990
    Date of Patent: August 13, 1991
    Assignee: Siemens Aktiengesellschaft
    Inventors: Siegfried Birkle, Johann Kammermaier, Albert Hammerschmidt, Gerhard Rittmayer, Hellmut Ahne
  • Patent number: 5037876
    Abstract: A planarizing dielectric, which is particularly suitable for electronic components, fulfills the required properties to a high degree when it comprises a matrix of a high-temperature resistant, organic polymer, into which matrix is intercalated in fine distribution a solid filler material, which is etchable in oxygen plasma, has high thermal conductivity and good dielectric properties.
    Type: Grant
    Filed: April 5, 1990
    Date of Patent: August 6, 1991
    Assignee: Siemens Aktiengesellschaft
    Inventors: Siegfried Birkle, Albert Hammerschmidt, Johann Kammermaier, Rainer Leuschner, Rolf-W. Schulte
  • Patent number: 4965134
    Abstract: A method for manufacturing highly heat resistant dielectrics is provided wherein an oligomeric and/or polymeric hydroxypolyamide is dissolved in an organic solvent and then applied to a substrate. The solvent is removed and the hydroxypolyamide is converted into a polybenzoxazole by annealing at a temperature of between 200.degree. to 500.degree. C. The resulting dielectrics are stable up to 550.degree. C. and have a continuous temperature resistance of more than 3 hours at 470.degree. C. The dielectrics are particularly well suited for applications in microelectronics.
    Type: Grant
    Filed: May 9, 1988
    Date of Patent: October 23, 1990
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Albert Hammerschmidt
  • Patent number: 4849051
    Abstract: The invention provides heat-resistant positive resists and methods for preparing heat-resistant relief structures therefrom. The positive resists are based upon polybenzoxazole precursor stages and diazoquinones. The polybenzoxazole precursor stages are hydroxypolyamides with the following structure: ##STR1## where R, R*, R.sub.1 and R.sub.1 * are aromatic groups; n.sub.1 and n.sub.2 =1 to 100; and R.noteq.R* and/or R.sub.1 .noteq.R.sub.1 *.
    Type: Grant
    Filed: May 9, 1988
    Date of Patent: July 18, 1989
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hellmut Ahne, Albert Hammerschmidt