Abstract: An optical phonograph cartridge includes an optical vibration sensor that operatively couples to a stylus/cantilever to convert, to optical signals, mechanical vibrations representative of the music encoded in the groove of a vinyl record. The optical vibration sensor includes a photonic integrated circuit includes an input waveguide network for conveying light and an output waveguide network for conveying modulated light, wherein the modulated light is generated by a screen that is attached to the cantilever and is disposed between the input and output waveguide networks.

Abstract: The method of manufacturing of a solar cell comprises the steps of: providing a semiconductor substrate (100) comprising an electrically conductive region (11) extending at a first side thereof; and providing a tunnelling oxide (13) by thermal oxidation followed by a boron doped polysilicon LPCVD deposited layer on the second side of the semiconductor substrate. Herein, the provision of the doped polysilicon layer (20) comprises depositing a multilayer stack of first sublayers (21, 22, 23) of silicon and second sublayers (31, 32) of boron dopant in alternation, and subsequent annealing. Thereafter the solar cell is finalized with passivation layers on at least the first side and suitable metallization layers on the emitter and base regions.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: Processing methods and internal reactor parts avoid peeling and particle generation caused by differences in the coefficients of thermal expansion (CTE's) between reactor parts and films deposited on the reactor parts in hot wall CVD chambers. Conventional materials for reactor parts have relatively low CTE's, resulting in significant CTE differences with modem films, which can be deposited on the surfaces of reactor parts during semiconductor processing. Such CTE differences can cause cracking and flaking of the deposited films, thereby leading to particle generation. Reactor parts, such as boats and pedestals, which undergo large thermal cycles even in a hot wall chamber, are made of materials having a CTE greater than about 5×10?6 K?1, in order to more closely match the CTE of deposited materials, such TiN.

Abstract: A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550° C., and at temperatures within 100° C. of one another.

Abstract: A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550° C., and at temperatures within 100° C. of one another.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: Sorting/storage device for wafers. A sorting device is provided in which at least two cassettes containing wafers may be present and the wafers are moved from one cassette to the other cassette or vice versa. If appropriate, a measuring station may be present in the sorting device. In the immediate vicinity of the sorting device, the cassettes are stored in a magazine which is designed for this purpose and the cassettes are moved using a handling device for cassettes.

Abstract: Processing methods and internal reactor parts avoid peeling and particle generation caused by differences in the coefficients of thermal expansion (CTE's) between reactor parts and films deposited on the reactor parts in hot wall CVD chambers. Conventional materials for reactor parts have relatively low CTE's, resulting in significant CTE differences with modem films, which can be deposited on the surfaces of reactor parts during semiconductor processing. Such CTE differences can cause cracking and flaking of the deposited films, thereby leading to particle generation. Reactor parts, such as boats and pedestals, which undergo large thermal cycles even in a hot wall chamber, are made of materials having a CTE greater than about 5×10?6 K?1, in order to more closely match the CTE of deposited materials, such TiN.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: A process tool controller of a semiconductor processing tool is provided with software that enables collecting, monitoring and logging information regarding the tool's consumption. Data is collected from the devices used for control of process conditions via the analog and digital inputs and outputs of the process tool controller. Consequently, the devices for controlling the process conditions have the additional function of measuring the tool's consumption. In this way the information regarding the tool's consumption is completely collected on board of the process tool. The parameters to be monitored and reported can be configured by the user, with use of a configuration editor, resulting in optimum flexibility of the system. In the illustrated embodiment, the user interface of the consumption monitoring and logging software is integrated into the user interface of the process control and monitoring software.

Abstract: An apparatus for processing substrates comprises a substrate handling chamber, including a substrate handling robot for transferring substrates from cassettes into a substrate carrier. A processing chamber is provided adjacent to the handling chamber, including one or more furnaces adapted to process a plurality of the substrates supported in the carrier. A weighing device is accessible to the substrate handler. The weighing device is adapted to weigh the substrates before and after processing the substrates in the processing chamber. The illustrated process is a curing anneal for a low k polymer previously deposited on the substrates.

Abstract: An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

Abstract: A process tool controller of a semiconductor processing tool is provided with software that enables collecting, monitoring and logging information regarding the tool's consumption. Data is collected from the devices used for control of process conditions via the analog and digital inputs and outputs of the process tool controller. Consequently, the devices for controlling the process conditions have the additional function of measuring the tool's consumption. In this way the information regarding the tool's consumption is completely collected on board of the process tool. The parameters to be monitored and reported can be configured by the user, with use of a configuration editor, resulting in optimum flexibility of the system. In the illustrated embodiment, the user interface of the consumption monitoring and logging software is integrated into the user interface of the process control and monitoring software.

Abstract: A process tool controller of a semiconductor processing tool is provided with software that enables collecting, monitoring and logging information regarding the tool's consumption. Data is collected from the devices used for control of process conditions via the analog and digital inputs and outputs of the process tool controller. Consequently, the devices for controlling the process conditions have the additional function of measuring the tool's consumption. In this way the information regarding the tool's consumption is completely collected on board of the process tool. The parameters to be monitored and reported can be configured by the user, with use of a configuration editor, resulting in optimum flexibility of the system. In the illustrated embodiment, the user interface of the consumption monitoring and logging software is integrated into the user interface of the process control and monitoring software.

Abstract: An apparatus for processing substrates comprises a substrate handling chamber, including a substrate handling robot for transferring substrates from cassettes into a substrate carrier. A processing chamber is provided adjacent to the handling chamber, including one or more furnaces adapted to process a plurality of the substrates supported in the carrier. A weighing device is accessible to the substrate handler. The weighing device is adapted to weigh the substrates before and after processing the substrates in the processing chamber. The illustrated process is a curing anneal for a low k polymer previously deposited on the substrates.

Abstract: An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

Abstract: Device for processing semiconductor wafers, comprising at least one processing chamber which is completely closed with the exception of a connection to a distribution. System. In said at least one processing chamber there are situated preferably two reactors and a common feed/removal system in order to be able to subject wafers, which may optionally be arranged in boats, to an identical processing operation.

Abstract: Enhanced inserts are formed having a cylindrical grip and a protrusion extending from the grip. An ultra hard material layer is bonded on top of the protrusion. The inserts are mounted on a rock bit and contact the earth formations off center. The ultra hard material layer is thickest at a critical zone which encompasses a major portion of the region of contact between the insert and the earth formation. Transition layers may also be formed between the ultra hard material layer and the protrusion so as to reduce stresses formed on the interface between the ultra hard material and the protrusion.