Abstract: A fabrication process for a device such as a backplane for a flat panel display includes depositing thin film layers on a substrate, forming a 3D template overlying the thin film layers, and etching the 3D template and the thin film layers to form gate lines and transistors from the thin film layers. An insulating or passivation layer can then be deposited on the gate lines and the transistors, so that column or data lines can be formed on the insulating layer.

Abstract: A fabrication process for a device such as a backplane for a flat panel display includes depositing thin film layers on a substrate, forming a 3D template overlying the thin film layers, and etching the 3D template and the thin film layers to form gate lines and transistors from the thin film layers. An insulating or passivation layer can then be deposited on the gate lines and the transistors, so that column or data lines can be formed on the insulating layer.

Abstract: A fabrication process for a device such as a backplane for a flat panel display includes depositing thin film layers on a substrate, forming a 3D template overlying the thin film layers, and etching the 3D template and the thin film layers to form gate lines and transistors from the thin film layers. An insulating or passivation layer can then be deposited on the gate lines and the transistors, so that column or data lines can be formed on the insulating layer.

Abstract: Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.

Abstract: An article comprises a semiconductor substrate and a coating mixture on the semiconductor substrate. The coating mixture Is comprised of adhesion promoter and photopolymer. The adhesion promoter contains ?-amino propyltriethoxysilane in organic solution.

Abstract: A method of coating a semiconductor substrate material with a coating material consisting of the steps of mixing an adhesion promoter with a coating material and applying the mixture to a semiconductor substrate material. The invention also includes means for coating a semiconductor substrate material with a coating material comprising means for mixing adhesion promoters with coating materials and means for applying the mixture of adhesion promoters and coating materials to a semiconductor substrate.

Abstract: A method of coating a semiconductor substrate material with a coating material consisting of the steps of mixing an adhesion promoter with a coating material and applying the mixture to a semiconductor substrate material. The invention also includes means for coating a semiconductor substrate material with a coating material comprising means for mixing adhesion promoters with coating materials and means for applying the mixture of adhesion promoters and coating materials to a semiconductor substrate.

Abstract: A method of coating a semiconductor substrate material with a coating material consisting of the steps of mixing an adhesion promoter with a coating material and applying the mixture to a semiconductor substrate material. The invention also includes means for coating a semiconductor substrate material with a coating material comprising means for mixing adhesion promoters with coating materials and means for applying the mixture of adhesion promoters and coating materials to a semiconductor substrate.