Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Abstract: A single-slope ADC, particularly suitable for use in a massive-parallel ADC architecture in a readout circuit of a CMOS imager. A plurality of ramp signals are generated which define non-overlapping sub-ranges of the full input range. For each ADC channel, the sub-range in which the voltage of the input signal falls is determined, and the corresponding ramp signal is selected for use in the A/D conversion. Thus, the speed of the A/D conversion process can be increased and the power consumption decreased.

Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Abstract: A single-slope ADC, particularly suitable for use in a massive-parallel ADC architecture in a readout circuit of a CMOS imager. A plurality of ramp signals are generated which define non-overlapping sub-ranges of the full input range. For each ADC channel, the sub-range in which the voltage of the input signal falls is determined, and the corresponding ramp signal is selected for use in the A/D conversion. Thus, the speed of the A/D conversion process can be increased and the power consumption decreased.

Abstract: A method of manufacturing a semiconductor device whereby a photoresist layer is provided on a surface of a slice of semiconductor material, after which two photomasks corresponding to adjoining portions of a pattern to be formed in the photoresist are projected on the photoresist by means of a projection lens, with overlapping edges. Strip-shaped transparent end portions of the two photomasks which are situated within this edge and which overlap one another in projection are provided with strip-shaped connection patterns which overlap one another in projection and which exhibit a complementary transmittance in projection. To keep the quantity of computer data necessary for describing the photomasks comparatively small, the strip-shaped transparent end portions of the two photomasks overlapping one another in projection are provided at their edges only with strip-shaped connection patterns overlapping one another in projection.

Abstract: A method of manufacturing a semiconductor device whereby a photoresist layer is provided on a surface of a slice of semiconductor material, after which two photomasks corresponding to adjoining portions of a pattern to be formed in the photoresist are projected on the photoresist by means of a projection lens, with overlapping edges. Strip-shaped transparent end portions of the two photomasks which are situated within this edge and which overlap one another in projection are provided with strip-shaped connection patterns which overlap one another in projection and which exhibit a complementary transmittance in projection. To keep the quantity of computer data necessary for describing the photomasks comparatively small, the strip-shaped transparent end portions of the two photomasks overlapping one another in projection are provided at their edges only with strip-shaped connection patterns overlapping one another in projection.

Abstract: It is known to adjust the width/height ratio (aspect ratio) in charge coupled imaging devices in that a number of columns may or may not be used on either side of the imaging matrix. It is possible in this manner, for example, to reduce the aspect ratio to 4/3 starting from a device with an aspect ratio of 16/9 corresponding to a widescreen TV. Practice has shown that this reduction in the width impairs the quality of the imaging device in the 4/3 mode. According to an aspect of the invention, an FT device with an aspect ratio of 4/3 is used and operated as a 4-phase CCD in the 4/3 mode. To obtain the 16/9 aspect ratio, the height of the device is reduced in that selected lines are not used. For this purpose, the sensor matrix is operated as a 3-phase CCD, whereby the number of lines in vertical direction is increased.

Abstract: In CCD arrangements, such as bidimensional image sensors, it is usual to provide the output register in the form of two (or more) horizontal registers. Via transverse connections between the horizontal registers, charge packets are transported from one horizontal register to the other horizontal register. In order to avoid delays during this transverse transport due to narrow channel effects, the clock electrodes of the first horizontal register adjoining the transverse connections are widened at the expense of adjacent clock electrodes. These widened electrodes may be in the trapezoidal form, as a result of which additional drift fields are induced below these electrodes.

Abstract: The control method is associated with a frame information transfer in accordance with the so-called accordion principle in which information shifts are locally effected with an opening, a transporting and a closing phase. The opening phase involves an enlargement of sensor element areas in a column direction in which a shift is effected during the transporting phase. The closing phase involves a reduction in the column direction of the enlarged areas (IE, BE, SE) at the appointed locations.

Abstract: The invention relates to a charge-coupled device, more particularly a sensor operated by the so-called accordion principle, in which the charge packets are stored with a very high density. In order to prevent signal mixing, charge pockets are transported with a lower density. The logic circuits required for driving the sensor are integrated in the chip itself.

Abstract: A camera for recording television, photographic or cinematographic images comprises an automatic focusing device. The information required for automatic focusing is obtained with the aid of a partial blocking arrangement for blocking two different portions of an optical path leading to an electronic image sensor. These two portions are located on opposite sides of an optical central axis. After signals obtained during the partial blocking periods have been compared with each other, the focusing is adjusted until signal correlation is optimized.To produce a camera having both undisturbed scene recording and automatic focusing, while using only one sensor, this camera includes a charge transfer device. The device comprises a pickup member, a storage member, and a shift register member.