Patents by Inventor Albert K. Harrington

Albert K. Harrington has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9053866
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: June 9, 2015
    Assignee: Kemet Electronics Corporation
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert K. Harrington, Chris Stolarski
  • Publication number: 20130250486
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Application
    Filed: May 15, 2013
    Publication date: September 26, 2013
    Applicant: Kemet Electronics Corporation
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert K. Harrington, Chris Stolarski
  • Patent number: 7605048
    Abstract: High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum foil is temporarily protected using aluminum or other materials, to form a sandwich. The exposed aluminum is treated to increase the surface area of the aluminum by at least one order of magnitude, while not attacking any portion of the protected metal. When the sandwich is separated, the treated bimetal foil is formed into a capacitor, where the copper layer is one electrode of the capacitor and the treated aluminum layer is in intimate contact with a dielectric layer of the capacitor.
    Type: Grant
    Filed: April 6, 2007
    Date of Patent: October 20, 2009
    Assignees: Kemet Electronics Corporation, Motorola, Inc.
    Inventors: Gregory J. Dunn, Jovica Savic, Philip M. Lessner, Albert K. Harrington
  • Publication number: 20080244885
    Abstract: High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum foil is temporarily protected using aluminum or other materials, to form a sandwich. The exposed aluminum is treated to increase the surface area of the aluminum by at least one order of magnitude, while not attacking any portion of the protected metal. When the sandwich is separated, the treated bimetal foil is formed into a capacitor, where the copper layer is one electrode of the capacitor and the treated aluminum layer is in intimate contact with a dielectric layer of the capacitor.
    Type: Application
    Filed: April 6, 2007
    Publication date: October 9, 2008
    Applicants: MOTOROLA, INC., KEMET ELECTRONICS CORPORATION
    Inventors: Gregory J. Dunn, Jovica Savic, Philip M. Lessner, Albert K. Harrington
  • Patent number: 6409905
    Abstract: A method of anodizing comprising suspending at least one aluminum substrate into an electrolyte solution and applying an anodizing current to the electrolyte solution, wherein the electrolyte solution comprises from about 5 to about 99.5 wt % glycerine, about 0.05 to about 5.0 wt. % of at least one orthophosphate salt selected from the group consisting of ammonium phosphates, alkali metal phosphates, amine phosphates, or mixtures thereof, and water.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: June 25, 2002
    Assignee: Kemet Electronics Corporation
    Inventors: Brian J. Melody, John T. Kinard, Philip M. Lessner, Albert K. Harrington, David A. Wheeler