Abstract: A method for processing a semiconductor device, the method including; providing a first semiconductor layer including first transistors; forming interconnection layers overlying the transistors, where the interconnection layers include copper or aluminum; forming a shielding heat conducting layer overlaying the interconnection layers; forming an isolation layer overlaying the shielding heat conducting layer; forming a second semiconductor layer overlying the isolation layer, and processing the second semiconductor layer at a temperature greater than about 400° C., where the interconnection layers are kept at a temperature below about 400° C.

Abstract: A thernopneumatic valve comprises a fluid channel plate defining a fluid port. A diaphragm plate is attached to the fluid channel plate. The diaphragm plate includes a displaceable diaphragm to selectively obstruct the fluid port of the fluid channel plate. A thermal isolating heater is connected to the diaphragm plate. The thermal isolating heater includes a thermal isolating heater body with a heating surface, a perimeter wall defining an extended axial cavity to confine a thermopneumatic working fluid that is used to control the position of the displaceable diaphragm, and a diaphragm obstruction structure to limit the motion of the displaceable diaphragm into the extended axial cavity.