Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.

Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.

Abstract: A method and an apparatus for inspecting a surface of a wafer disclosed. At least one incident-light illuminator is provided to illuminate an area of the surface of the wafer in a first and a second illumination mode, in particular a bright-field and a dark-field illumination. At least one image detector is provided to detect an image of the illuminated area. A storage device is used for storing values on the intensity and the color of an optimized illumination of each incident-light illumination mode.

Abstract: The invention concerns a method for inspecting the surface of a wafer, having at least a first and a second incident illumination device in order to emit respectively a first and a second incident illuminating light beam and to illuminate a region on the surface, and having at least one image sensing device in order to sense an image of the illuminated region, the first incident illumination device and the at least one image sensing device being arranged so that images of the illuminated region can be sensed in a bright-field configuration, and the second incident illumination device and the at least one image sensing device being arranged so that images of the illuminated region can be sensed in a dark-field configuration. A control device for controlling the first and the second incident illumination device and the at least one image sensing device is furthermore provided.

Abstract: A semiconductor substrate or wafer inspection device for detecting defects on wafer surfaces includes an air-cushion stage which can be displaced in two directions (X,Y) that are perpendicular to one another. Several air nozzles are provided for this purpose. At least one valve is connected to at least one electric control unit, the valve being configured in such a way that a normal pressure prevails in the air nozzles when the electric control unit delivers a corresponding signal.

Abstract: A method and an apparatus for inspecting a surface of a wafer disclosed. At least one incident-light illuminator is provided to illuminate an area of the surface of the wafer in a first and a second illumination mode, in particular a bright-field and a dark-field illumination. At least one image detector is provided to detect an image of the illuminated area. A storage device is used for storing values on the intensity and the color of an optimized illumination of each incident-light illumination mode.

Abstract: The invention concerns an apparatus for inspection of a wafer, encompassing at least two incident-light illumination devices that radiate a respective illuminating light beam which is incident obliquely onto the surface of a wafer to be inspected and respectively defines an illumination axis, an image capture device for capturing an image of the surface in a dark-field arrangement, and a wafer receiving device for receiving the wafer, on whose surface linearly extending features are configured, in a definable orientation. The apparatus is characterized in that the illumination axes are oriented perpendicular to one another, and the apparatus is designed in such a way that a projection of the respective illumination axis onto the surface of the wafer is oriented substantially perpendicular to respective linear features on the surface of the wafer. With the apparatus, macrodefects can be detected and the quality of the edge profile of features configured on the surface of the wafer can be assessed.

Abstract: The invention concerns an apparatus and a method for inspection of a wafer. The apparatus encompasses at least one stroboscopic incident-light illumination device for emitting a pulsed illuminating light beam onto a surface of the wafer and for illuminating a region on the surface of the wafer; and having [sic] at least one image acquisition device for acquiring an image of the respectively illuminated region on the surface of the wafer. The apparatus is characterized, according to the present invention, in that by at least one photodetection device for sensing light of the respective illuminating light beam, and a control device for controlling an image acquisition operation on the basis of the light sensed by the photodetection device, are provided. Intensity fluctuations of the light flashes of the incident-light illumination device are compensated for either by normalizing image data of the illuminated region or by controlling the duration of the light flashes.

Abstract: Defects on a wafer (26) can be detected using bright-field and/or dark-field illumination. The radiation incident onto the wafer (26) has, in this context, a substantial influence on the reliability of the measurement results. To improve the reliability of the measurement results, the wafer (26) is illuminated with an illumination device (12), adjustment of the illumination device (12), in particular its brightness and frequency, being accomplished in consideration of read-out stored illumination setpoints. These illumination setpoints are determined by way of a previous reference measurement.

Abstract: A system for the detection of macrodefects is disclosed, the system being surrounded by a housing (50) and being subdivided into a first segment (6), a second segment (8), and a third segment (10). Provided in the second segment (8) is a stage (2), displaceable in the X direction and Y direction, on which a wafer (25) is placed. Located in the first segment (6) is an aspiration device (36) that directs aspirated air via an air guide (37) into the second segment (8), the air guide (37) encompassing several air-directing panels (38) so that an air flow (60) is guided in parallel fashion over the wafer (25).

Abstract: The invention concerns an apparatus for inspection of a wafer, encompassing at least one incident-light illumination device that radiates an illuminating light beam which is incident obliquely onto a surface of a wafer to be inspected, and an image capture device for capturing an image of the surface in a dark-field arrangement. The wafer inspection apparatus is characterized in that at least one deflection device is provided in order to deflect an associated illuminating light beam onto the surface of the wafer.

Abstract: The invention concerns an apparatus for inspection of a wafer, encompassing at least one illumination device in order to radiate an illuminating light beam onto a surface of the wafer, and an image capture device in order to capture an image of an illuminated region on the surface of the wafer in a plurality of spectral regions, a color modification device being provided in order to modify the color spectrum of the illuminating light beam or of the reflected light beam. The wafer inspection apparatus is characterized in that the color modification device is designed in such a way that the color spectrum of the illuminating light beam, or that of the image that is acquired of the surface of the wafer, is adaptable to the spectral sensitivity of the image capture device.

Abstract: The present invention relates to a method and a device for the inspection of a wafer. The method comprises the following steps: illuminating at least one section of a surface of the wafer; acquiring an image of the illuminated section of the surface of the wafer using an image acquisition unit; determining at least one image area in the acquired image; and changing a size of an image field of the image acquisition unit on the basis of the at least one image area. To determine the image area, pattern recognition software searches for prominent structures in the acquired image. By changing the image field size, the throughput or the resolution of a wafer inspection device may be optimized alternately and the image field may always be tailored optimally to the shot size of the wafer.

Abstract: The invention relates to a wafer inspection device. The device comprises an air-cushion stage which can be displaced in two directions (X,Y) that are perpendicular to one another. Several air nozzles are provided for this purpose. At least one valve is connected to at least one electric control unit, the valve being configured in such a way that a normal pressure prevails in the air nozzles when the electric control unit delivers a corresponding signal.

Abstract: An apparatus for wafer inspection is described, comprising an incident-light illumination device (5) having an illumination axis and an imaging device (9) having an image axis, both of which are inclined with respect to one another and are directed onto a region to be inspected of the surface (42) of a wafer (2). According to the present invention, the apparatus is characterized in that the incident-light illumination device (5) and the imaging device (9, 19) each have associated with them a polarizing means whose transmission axes are oriented at a predetermined angle to one another.

Abstract: The present invention relates to an apparatus and method for automatically inspecting a wafer, having a light source and an illumination optics for illuminating the wafer for inspection, wherein the illumination optics comprises a variable gray filter for adjusting the illumination power.

Abstract: The present invention relates to a method of inspecting a wafer, wherein the wafer has a first area of periodically arranged SAWs and at least one second area of SAWs displaced with respect to the first area. The method comprises the steps of optically imaging the first area of the wafer by moving an imaging window in the period direction, displacing the imaging window relative to the wafer, optically imaging the second area of the wafer by moving the displaced imaging window in the period direction, and evaluating the image by comparing partial images.

Abstract: The present invention relates to an apparatus and a method for inspecting a wafer, comprising an illumination means for illuminating the surface of a wafer, an imaging means for optically imaging the surface of the wafer with at least one camera having an imaging area, a movement means for a relative movement between the imaging area and the surface of the wafer, and an evaluation means for evaluating the wafer, wherein the imaging means comprises two cameras focused on the same imaging area.

Abstract: A method for inspecting a wafer includes acquiring, prior to an application of a layer onto the wafer, a first optical image of a region of the wafer surface to be inspected. After at least partial removal of the layer, a second optical image is acquired. The region of the wafer surface is inspected by comparing the first and the second images.

Abstract: A method for inspecting a wafer includes telecentrically illuminating, with a radiation source, a region of the wafer surface to be inspected. An image of wafer region is acquired using a camera. The wafer region is inspected using the acquired image.