Abstract: A disclosed method may include receiving user information for electronically filing or updating an electronic data sheet that corresponds to a user and a domain; maintaining a record of past electronic activities by the user; electronically receiving interchange data associated with interchanges executed by the user; automatically generating the electronic data sheet for the user based on the user information and the interchange data, the electronic data sheet indicating a finalized amount of resources to be transmitted to the domain; and electronically adjusting an electronic value for the user according to a remittance risk determination that is based on the interchange data and the record of past electronic activities by the user, the adjusted electronic value indicating a maximum amount of resources for which an online software platform will transmit and receive protocols to enable providing by the online software platform the maximum amount of resources.

Abstract: Systems and methods are disclosed for automated preparation and transmission of electronic registrations, data sheets and resources. This may include electronically initiating a process to collect data via a graphical user interface (GUI) to facilitate automated preparation of an electronic registration, including electronically obtaining a pre-existing entity identifier. The system may use the entity identifier to perform automated actions to electronically collect one or more support content. The system may generate the electronic registration based on the one or more support content and also receives interchange data. The system then automatically generates an electronic data sheet based on the registration and interchange data. The system may then electronically file the generated electronic data sheet, electronically issuing an alert to electronically request additional resources and automatically transmitting the finalized amount of resources to the domain.

Abstract: A disclosed method may include receiving user information for electronically filing or updating an electronic data sheet that corresponds to a user and a domain; maintaining a record of past electronic activities by the user; electronically receiving interchange data associated with interchanges executed by the user; automatically generating the electronic data sheet for the user based on the user information and the interchange data, the electronic data sheet indicating a finalized amount of resources to be transmitted to the domain; and electronically adjusting an electronic value for the user according to a remittance risk determination that is based on the interchange data and the record of past electronic activities by the user, the adjusted electronic value indicating a maximum amount of resources for which an online software platform will transmit and receive protocols to enable providing by the online software platform the maximum amount of resources.

Abstract: A system for automated preparation and submission of electronic registration may obtain a pre-existing entity identifier that had been previously used by an electronic system of at least one authority entity to identify a primary entity. The system may electronically associate the pre-existing entity identifier with the primary entity and use it to perform automated actions to electronically collect one or more support content from the Internet or other sources regarding the primary entity. The system may electronically identify data from the support content relevant to the electronic registration and electronically extract the identified data from the support content. The system may also electronically verify the extracted data before electronically generating and submitting the electronic registration based on the extracted data. An adaptive UI may be automatically modified in response to a determination whether to electronically present a query via the adaptive UI for the supplemental data.

Abstract: A semiconductor structure for RF applications comprises: a first ?TP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

Abstract: A semiconductor structure for RF applications comprises: a first ?TP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

Abstract: A semiconductor structure for RF applications comprises: a first ?TP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

Abstract: A level shifter according to some embodiments is disclosed. In some embodiments, a level shifter includes a middle-of-the-line (MOL) capacitor; and a circuit including at least one thin-film transistor coupled to the MOL capacitor, wherein an input voltage provided to the MOL capacitor is split between the MOL capacitor and the circuit. The MOL capacitor can be formed with a contact strip adjacent to a gate structure. A method of forming a level shifter using thin-oxide technologies includes forming a middle-of-the-line (MOL) capacitor; forming a circuit with one or more thin-film transistors; and coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.

Abstract: Aspects of the disclosure includes a transistor-under-test (TUT) to charge/discharge a capacitor; changing an oscillation state when a capacitor voltage crosses a threshold and turning OFF the TUT; discharging the capacitor using the TUT; commencing precharging the capacitor after detecting the capacitor reaches a transition voltage; commencing discharging the capacitor after a precharger time delay; sustaining a relaxation oscillator waveform, wherein the relaxation oscillator waveform is based on turning OFF/ON the TUT; and generating a digital representation of a TUT current associated with a relaxation oscillator period of the relaxation oscillator waveform.

Abstract: A level shifter according to some embodiments is disclosed. In some embodiments, a level shifter includes a middle-of-the-line (MOL) capacitor; and a circuit including at least one thin-film transistor coupled to the MOL capacitor, wherein an input voltage provided to the MOL capacitor is split between the MOL capacitor and the circuit. The MOL capacitor can be formed with a contact strip adjacent to a gate structure. A method of forming a level shifter using thin-oxide technologies includes forming a middle-of-the-line (MOL) capacitor; forming a circuit with one or more thin-film transistors; and coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.

Abstract: In an aspect of the disclosure, a MOS device for using bulk cross-coupled thin-oxide decoupling capacitor is provided. The MOS device may include a pMOS transistor and an nMOS transistor. The MOS device may include a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The first set of transistor body connections may couple a first voltage source to the pMOS transistor body. The first set of transistor body connections may further couple a second voltage source to the nMOS transistor body. The MOS device may include a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The second set of transistor body connections may couple the nMOS transistor gate to the pMOS transistor body. The second set of transistor body connections may further couple the pMOS transistor gate to the nMOS transistor body.

Abstract: In an aspect of the disclosure, a MOS device for using bulk cross-coupled thin-oxide decoupling capacitor is provided. The MOS device may include a pMOS transistor and an nMOS transistor. The MOS device may include a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The first set of transistor body connections may couple a first voltage source to the pMOS transistor body. The first set of transistor body connections may further couple a second voltage source to the nMOS transistor body. The MOS device may include a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The second set of transistor body connections may couple the nMOS transistor gate to the pMOS transistor body. The second set of transistor body connections may further couple the pMOS transistor gate to the nMOS transistor body.