Patents by Inventor Albert Lan

Albert Lan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230352402
    Abstract: Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.
    Type: Application
    Filed: July 10, 2023
    Publication date: November 2, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Richard W. Plavidal, Albert Lan
  • Patent number: 11699651
    Abstract: Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: July 11, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Richard W. Plavidal, Albert Lan
  • Publication number: 20190122981
    Abstract: Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.
    Type: Application
    Filed: October 22, 2018
    Publication date: April 25, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Richard W. Plavidal, Albert Lan