Publication number: 20250162900
Abstract: The present invention provides a halogen-free MXene represented by the following formula (1), that has no halogen in its surface functional group by performing an etching process to generate MXene from a MAX Phase material, and after the etching process, performing an impurity removal treatment process of etching and removing impurities using a halogen-free etchant and a halogen-free post-treatment agent, respectively. Mn+1XnTx??[Formula 1] wherein, M is a transition metal element selected from the group consisting of Sc, Ti, V, Cr, Mn, Y, Zr, Nb, Mo, Hf, and Ta, X is at least one of carbon and nitrogen, and n is an integer from 1 to 4, and Tx is a functional group selected from the group consisting of oxygen, alkoxide of 1 to 5 carbon atoms, alkyl, carboxylate, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, sulfonate, thiol, and epoxide.
Type:
Application
Filed:
September 4, 2024
Publication date:
May 22, 2025
Applicant:
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventors:
Taegon OH, Jaeeun YOON, Seong Chan KIM, Hyo Jin LEE, Albert LEE, Seon Joon KIM, Seung Sang HWANG, Chong Min KOO